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1. (WO2019063254) METHOD FOR DETERMINING PROPERTIES OF AN EUV SOURCE
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Pub. No.: WO/2019/063254 International Application No.: PCT/EP2018/073903
Publication Date: 04.04.2019 International Filing Date: 05.09.2018
IPC:
G03F 7/20 (2006.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20
Exposure; Apparatus therefor
Applicants:
CARL ZEISS SMT GMBH [DE/DE]; Rudolf-Eber-Strasse 2 73447 Oberkochen, DE
Inventors:
LAUFER, Timo; DE
HAUF, Markus; DE
MÜLLER, Ulrich; DE
Agent:
RAUNECKER, Klaus, Peter; DE
Priority Data:
10 2017 217 266.528.09.2017DE
Title (EN) METHOD FOR DETERMINING PROPERTIES OF AN EUV SOURCE
(FR) PROCÉDÉ DE DÉTERMINATION DE PROPRIÉTÉS D'UNE SOURCE UVE
(DE) VERFAHREN ZUR BESTIMMUNG VON EIGENSCHAFTEN EINER EUV-QUELLE
Abstract:
(EN) The invention relates to a method for determining at least one property of an EUV source (3) in a projection printing facility (1) for semiconductor lithography, according to which the property is determined on the basis of the electromagmetic radiation (14) emitted from the EUV source (3), a thermal load for a component (2) of the projection printing facility (1) being determined and the property being deduced on the basis of the determined thermal load.
(FR) L'invention concerne un procédé de détermination d'au moins une propriété d'une source UVE (3) dans une installation d'éclairage par projection (1) pour la lithographie de semi-conducteurs, la propriété étant déterminée au moyen du rayonnement électromagnétique (14) émis par la source UVE (3). Selon l'invention, une charge thermique est déterminée pour un composant (2) de l'installation d'éclairage par projection (1) et la propriété est déduite d'après la charge thermique déterminée.
(DE) Die Erfindung betrifft ein Verfahren zur Bestimmung mindestens einer Eigenschaft einer EUV-Quelle (3) in einer Projektionsbelichtungsanlage (1) für die Halbleiterlithographie, wobei die Eigenschaft anhand der von der EUV-Quelle (3) ausgehenden elektromagnetischen Strahlung (14) ermittelt wird und wobei eine Thermallast für eine Komponente (2) der Projektionsbelichtungsanlage (1) ermittelt wird und anhand der ermittelten Thermallast auf die Eigenschaft geschlossen wird.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: German (DE)
Filing Language: German (DE)