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1. (WO2019062573) PROCESS CHAMBER AND CAPACITIVELY COUPLED PLASMA APPARATUS
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Pub. No.: WO/2019/062573 International Application No.: PCT/CN2018/105968
Publication Date: 04.04.2019 International Filing Date: 17.09.2018
IPC:
H01J 37/32 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
J
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37
Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32
Gas-filled discharge tubes
Applicants:
北京北方华创微电子装备有限公司 BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD. [CN/CN]; 中国北京市 北京经济技术开发区文昌大道8号 No.8 Wenchang Avenue Beijing Economic-Technological Development Area Beijing 100176, CN
Inventors:
王文章 WANG, Wenzhang; CN
陈鹏 CHEN, Peng; CN
丁培军 DING, Peijun; CN
刘菲菲 LIU, Feifei; CN
Agent:
北京天昊联合知识产权代理有限公司 TEE & HOWE INTELLECTUAL PROPERTY ATTORNEYS; 中国北京市 东城区建国门内大街28号民生金融中心D座10层张天舒 ZHANG, Tianshu 10th Floor, Tower D, Minsheng Financial Center 28 Jianguomennei Avenue, Dongcheng District Beijing 100005, CN
Priority Data:
201710893855.527.09.2017CN
Title (EN) PROCESS CHAMBER AND CAPACITIVELY COUPLED PLASMA APPARATUS
(FR) CHAMBRE DE TRAITEMENT ET APPAREIL À PLASMA À COUPLAGE CAPACITIF
(ZH) 工艺腔室以及电容耦合等离子体设备
Abstract:
(EN) Provided are a process chamber and a capacitively coupled plasma apparatus. The process chamber comprises a chamber body, a lining, and a magnetic assembly, wherein the lining is arranged inside the chamber body and defines and forms a process area for processing a wafer; and the magnetic assembly is arranged outside the process area, and a magnetic field generated by the magnetic assembly can narrow the gap between the etching rate of a peripheral area of the wafer and the etching rate of a central area thereof during the processing process of the wafer.
(FR) L'invention porte sur une chambre de traitement et sur un appareil à plasma à couplage capacitif. La chambre de traitement comprend un corps de chambre, un revêtement et un ensemble magnétique, le revêtement étant disposé à l'intérieur du corps de chambre et définissant et formant une zone de traitement pour traiter une tranche; et l'ensemble magnétique étant disposé à l'extérieur de la zone de traitement, et un champ magnétique généré par l'ensemble magnétique pouvant rétrécir l'espace entre le taux de gravure d'une zone périphérique de la tranche et le taux de gravure d'une zone centrale de celle-ci pendant le processus de traitement de la tranche.
(ZH) 本公开提供了一种工艺腔室以及电容耦合等离子体设备,工艺腔室包括腔室本体、内衬和磁性组件。内衬设置于腔室本体内,限定形成处理晶片的工艺区域;磁性组件设置于工艺区域外,其所产生的磁场能够在所述晶片处理工艺中,缩小晶片的边缘区域与中心区域的刻蚀速率的差距。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)