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1. (WO2019062323) PHOTOVOLTAIC ASSEMBLY
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/062323 International Application No.: PCT/CN2018/098238
Publication Date: 04.04.2019 International Filing Date: 02.08.2018
IPC:
H01L 31/0443 (2014.01) ,H01L 31/05 (2014.01) ,H01L 31/0747 (2012.01) ,H01L 31/0224 (2006.01)
[IPC code unknown for H01L 31/0443]
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
042
including a panel or array of photoelectric cells, e.g. solar cells
05
characterised by special interconnection means
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
06
characterised by at least one potential-jump barrier or surface barrier
072
the potential barriers being only of the PN heterojunction type
0745
comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
0747
comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT solar cells
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
Details
0224
Electrodes
Applicants:
君泰创新(北京)科技有限公司 BEIJING JUNTAI INNOVATION TECHNOLOGY CO., LTD. [CN/CN]; 中国北京市 大兴区亦庄经济技术开发区荣华南路9号院2号楼10层 Floor 10 Building 2, No. 9 Ronghua South Road, Yizhuang Economic Technological Development Area, Daxing District Beijing 100176, CN
Inventors:
郁操 YU, Cao; CN
龙永灯 LONG, Yongdeng; CN
胡德政 HU, Dezheng; CN
李沅民 LI, Yuanmin; CN
Agent:
北京品源专利代理有限公司 BEYOND ATTORNEYS AT LAW; 中国北京市 海淀区莲花池东路39号西金大厦6层 F6, Xijin Centre 39 Lianhuachi East Rd., Haidian District Beijing 100036, CN
Priority Data:
201721253462.X27.09.2017CN
Title (EN) PHOTOVOLTAIC ASSEMBLY
(FR) ENSEMBLE PHOTOVOLTAÏQUE
(ZH) 光伏组件
Abstract:
(EN) A photovoltaic assembly comprises: multiple cells; a wire used to connect the multiple cells in series; diodes, each cell being connected in parallel with one of the diodes, or a specified number of neighboring cells being integrally connected in parallel with one of the diodes; and a package structure, the cells, the wire and the diodes being provided in the package structure.
(FR) L'invention concerne un ensemble photovoltaïque comprenant : de multiples cellules ; un fil utilisé pour connecter les multiples cellules en série ; des diodes, chaque cellule étant connectée en parallèle à l'une des diodes, ou un nombre spécifié de cellules voisines étant intégralement connectées en parallèle avec l'une des diodes ; et une structure de boîtier, les cellules, le fil et les diodes étant disposés dans la structure de boîtier.
(ZH) 一种光伏组件,包括:多个电池片;导线,所述多个电池片通过所述导线串联;二极管,每个电池片并联一个二极管,或者指定个数相邻的电池片作为整体并联一个二极管;以及封装结构,所述电池片、所述导线和所述二极管设置在所述封装结构中。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)