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1. (WO2019062117) TRANSFER METHOD AND TRANSFER APPARATUS FOR SEMICONDUCTOR MICRO-ELEMENT
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Pub. No.: WO/2019/062117 International Application No.: PCT/CN2018/085127
Publication Date: 04.04.2019 International Filing Date: 28.04.2018
IPC:
H01L 21/67 (2006.01) ,H01L 21/60 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50
Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
60
Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
Applicants:
厦门市三安光电科技有限公司 XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD. [CN/CN]; 中国福建省厦门市 思明区吕岭路1721-1725号 No.1721-1725, Lvling Road, Siming District Xiamen, Fujian 361009, CN
Inventors:
吴政 WU, Zheng; CN
丁绍滢 TING, Shao-Ying; CN
李佳恩 LEE, Chia-En; CN
徐宸科 HSU, Chen-Ke; CN
Priority Data:
201710918727.130.09.2017CN
Title (EN) TRANSFER METHOD AND TRANSFER APPARATUS FOR SEMICONDUCTOR MICRO-ELEMENT
(FR) PROCÉDÉ DE TRANSFERT ET APPAREIL DE TRANSFERT POUR MICRO-ÉLÉMENT SEMI-CONDUCTEUR
(ZH) 半导体微元件的转移方法及转移装置
Abstract:
(EN) Disclosed are a transfer method and a transfer apparatus for a semiconductor micro-element. The method involves: arranging a bonding layer on a substrate; and connecting the bonding layer with a semiconductor micro-element, wherein the connected bonding layer partially has a columnar support structure; there is a through hole for blowing air in the middle of the columnar support structure of the bonding layer; one end, close to the semiconductor micro-element, of the through hole is an electrode or non-electrode area; and the bonding layer is made of a polymer.
(FR) L'invention concerne un procédé de transfert et un appareil de transfert pour un micro-élément semi-conducteur. Le procédé comprend : l'agencement d'une couche de liaison sur un substrat ; et la connexion de la couche de liaison avec un micro-élément semi-conducteur, la couche de liaison connectée ayant partiellement une structure de support en colonne ; il y a un trou traversant pour souffler de l'air au milieu de la structure de support en colonne de la couche de liaison ; une extrémité, proche du micro-élément semi-conducteur, du trou traversant est une zone d'électrode ou de non-électrode ; et la couche de liaison est constituée d'un polymère.
(ZH) 本发明公开了半导体微元件的转移方法及转移装置,在基板上设置有键合层,键合层与半导体微元件相连接,连接的键合层部分具有柱状支撑结构,键合层柱状支撑结构的中间有用于吹气的通孔,通孔靠近半导体微元件的一端为电极或非电极区域,键合层材料为高聚物。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)