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1. (WO2019062091) TRANSPARENT COLLOID, LED LIGHT SOURCE DEVICE AND MANUFACTURING METHOD THEREFOR
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Pub. No.: WO/2019/062091 International Application No.: PCT/CN2018/084029
Publication Date: 04.04.2019 International Filing Date: 23.04.2018
IPC:
H01L 25/075 (2006.01) ,H01L 33/56 (2010.01) ,H01L 33/60 (2010.01) ,H01L 33/64 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03
all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04
the devices not having separate containers
075
the devices being of a type provided for in group H01L33/78
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
52
Encapsulations
56
Materials, e.g. epoxy or silicone resin
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
58
Optical field-shaping elements
60
Reflective elements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
64
Heat extraction or cooling elements
Applicants:
厦门市启明辉科技有限公司 XIAMEN BRITESUN TECHNOLOGY CO., LTD. [CN/CN]; 中国福建省厦门市 集美区厦门市软件园三期诚毅北大街62号109单元0182号 No.0182, Unit 109, No.62 North Chengyi Avenue, Xiamen Software Park, Jimei District Xiamen, Fujian 361000, CN
Inventors:
姜研 JIANG, Yan; CN
Agent:
厦门福贝知识产权代理事务所(普通合伙) XIAMEN FEBE INTELLECTUAL PROPERTY AGENCY GP; 中国福建省厦门市 思明区软件园创新大厦B区201 201, Area B, Innovation Building, Xiamen Software Park, Zengcuoan West Road, Singming District Xiamen, Fujian 361000, CN
Priority Data:
201710907508.329.09.2017CN
Title (EN) TRANSPARENT COLLOID, LED LIGHT SOURCE DEVICE AND MANUFACTURING METHOD THEREFOR
(FR) COLLOÏDE TRANSPARENT, DISPOSITIF DE SOURCE LUMIÈRE À DEL ET SON PROCÉDÉ DE FABRICATION
(ZH) 一种透明胶体、LED光源器件及其制造方法
Abstract:
(EN) Disclosed are a transparent colloid, an LED light source device and a manufacturing method therefor. A novel transparent colloid is prepared by incorporating a light diffusion agent or mixed powder of the light diffusion agent and fluorescent powder at an amount of 2-8% by weight into methyl-based silica gel or phenyl-based silica gel, and the novel transparent colloid is applied to a blue chip fixed in an SMD or COB form. The light extracting rate of the prepared LED light source device reaches 92% or more of that of a light source device not coated with any colloid (i.e., the blue chip is bare), and is improved by 20% or more than the light extracting rate of a light source device coated with methyl-based silica gel or phenyl-based silica gel.
(FR) L'invention concerne un colloïde transparent, un dispositif de source lumière à DEL et son procédé de fabrication. Un nouveau colloïde transparent est préparé en incorporant un agent de diffusion de lumière ou une poudre mélangée de l'agent de diffusion de lumière et de la poudre fluorescente à une quantité de 2 à 8 % en poids dans un gel de silice à base de méthyle ou un gel de silice à base de phényle, et le nouveau colloïde transparent est appliqué à une puce bleue fixée dans une forme CMS ou COB. Le taux d'extraction de lumière du dispositif de source lumière à DEL préparé atteint 92 % ou plus de celui d'un dispositif de source lumière non revêtu d'un colloïde quelconque (c'est-à-dire, la puce bleue est nue), et est amélioré de 20 % ou plus par rapport au taux d'extraction de lumière d'un dispositif de source lumière revêtu d'un gel de silice à base de méthyle ou d'un gel de silice à base de phényle.
(ZH) 本发明公开了一种透明胶体、LED光源器件及其制造方法,在甲基系硅胶或苯基系硅胶中掺入重量占比2-8%的散光剂或者散光剂和荧光粉的混合粉体,制成新型透明胶体,涂覆在以SMD或COB形式固定的蓝光芯片上,制成的LED光源器件,出光率达到了不涂任何胶体(即蓝光芯片裸露)的光源器件92%以上,比涂甲基系硅胶或苯基系硅胶的光源器件的出光率提高20%以上。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)