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1. (WO2019061926) CARBON NANO-MATERIAL COMPOSITE STRUCTURE-BASED THREE-DIMENSIONAL SILICON THROUGH-HOLE VERTICAL INTERCONNECTION METHOD
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Pub. No.: WO/2019/061926 International Application No.: PCT/CN2018/000016
Publication Date: 04.04.2019 International Filing Date: 15.01.2018
IPC:
H01L 21/768 (2006.01) ,H01L 23/48 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71
Manufacture of specific parts of devices defined in group H01L21/7086
768
Applying interconnections to be used for carrying current between separate components within a device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
48
Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
Applicants:
江苏师范大学 JIANGSU NORMAL UNIVERSITY [CN/CN]; 中国江苏省徐州市 和平路57号金于汶 JIN, Yuwenhui No.57 Heping Road Xuzhou, Jiangsu 221000, CN
Inventors:
陆向宁 LU, Xiangning; CN
何贞志 HE, Zhenzhi; CN
韩继光 HAN, Jiguang; CN
宿磊 SU, Lei; CN
樊梦莹 FANG, Mengying; CN
刘凡 LIU, Fan; CN
Agent:
常州市科谊专利代理事务所 CHANGZHOU KEYI PATENT AGENCY; CN
Priority Data:
201710900247.228.09.2017CN
Title (EN) CARBON NANO-MATERIAL COMPOSITE STRUCTURE-BASED THREE-DIMENSIONAL SILICON THROUGH-HOLE VERTICAL INTERCONNECTION METHOD
(FR) PROCÉDÉ D'INTERCONNEXION VERTICALE DE TROU TRAVERSANT DE SILICIUM TRIDIMENSIONNEL À BASE DE STRUCTURE COMPOSITE DE NANOMATÉRIAU DE CARBONE
(ZH) 一种基于碳纳米材料复合结构的三维硅通孔垂直互联方法
Abstract:
(EN) Disclosed by the present invention is a carbon nano-material composite structure-based three-dimensional silicon through-hole vertical interconnection method: fabricating silicon holes on a silicon substrate; depositing an insulating layer on a surface of the silicon substrate and an inner wall of the silicon holes; depositing a blocking layer on the insulating layer, and depositing a catalytic metal layer on the blocking layer; etching the catalytic metal layer to form catalytic nano-particles; using the catalytic nano-particles to grow a carbon nano-material composite layer; attaching a dry film on a surface of the carbon nano-material composite layer on the silicon substrate, exposing and developing to form a dry film layer; depositing a seed layer on a bottom surface of the silicon holes and a surface of the dry film layer; filling a conductive material into the silicon holes. The present invention uses the excellent thermal and mechanical performance of a carbon nano-material to solve the heat dissipation problem of a through silicon via (TSV) encapsulation structure that is caused by increased power density as well as the problem of thermal stress mismatch among encapsulation materials, thus improving the thermal conductivity and encapsulation reliability of a 3D-TSV structure.
(FR) La présente invention concerne un procédé d'interconnexion verticale de trou traversant de silicium tridimensionnel à base de structure composite de nanomatériau de carbone : fabriquer des trous de silicium sur un substrat de silicium ; déposer une couche isolante sur une surface du substrat de silicium et une paroi interne des trous de silicium ; déposer une couche de blocage sur la couche isolante, et déposer une couche métallique catalytique sur la couche de blocage ; graver la couche métallique catalytique pour former des nanoparticules catalytiques ; utiliser les nanoparticules catalytiques pour faire croître une couche composite de nanomatériau de carbone ; fixer un film sec sur une surface de la couche composite de nanomatériau de carbone sur le substrat de silicium, exposer et développer pour former une couche de film sec ; déposer une couche de germe sur une surface inférieure des trous de silicium et une surface de la couche de film sec ; remplir un matériau conducteur dans les trous de silicium. La présente invention utilise les excellentes performances thermiques et mécaniques d'un nanomatériau de carbone pour résoudre le problème de dissipation de chaleur d'une structure d'encapsulation de trou d'interconnexion traversant le silicium (TSV)) qui est provoquée par une densité de puissance accrue ainsi que le problème de désadaptation de contrainte thermique entre des matériaux d'encapsulation, améliorant ainsi la conductivité thermique et la fiabilité d'encapsulation d'une structure de TSV 3D.
(ZH) 本发明公开了一种基于碳纳米材料复合结构的三维硅通孔垂直互联方法,在硅基片上制作硅孔;在硅基片表面及硅孔内壁沉积绝缘层;在绝缘层上沉积阻挡层,在阻挡层上沉积催化金属层;刻蚀催化金属层,形成纳米催化颗粒;利用纳米催化颗粒生长碳纳米材料复合层;在硅基片上的碳纳米材料复合结构层表面贴干膜,曝光、显影形成干膜层;在硅孔底面和干膜层表面上沉积种子层;在硅孔内填充导电材料。本发明利用碳纳米材料良好的热学和机械性能,解决由功率密度增加导致的TSV封装结构的散热问题和封装材料间的热应力失配问题,提高3D-TSV结构的导热性及封装可靠性。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)