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1. (WO2019061778) METHOD FOR PREPARING THIN FILM TRANSISTOR, MASK, THIN FILM TRANSISTOR, AND DISPLAY DEVICE
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Pub. No.: WO/2019/061778 International Application No.: PCT/CN2017/112848
Publication Date: 04.04.2019 International Filing Date: 24.11.2017
IPC:
H01L 21/336 (2006.01) ,H01L 21/027 (2006.01) ,H01L 29/786 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334
Multistep processes for the manufacture of devices of the unipolar type
335
Field-effect transistors
336
with an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
027
Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
Applicants:
武汉华星光电技术有限公司 WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD [CN/CN]; 中国湖北省武汉市 武汉东湖开发区高新大道666号生物城C5栋 Building C5, Biolake of Optics Valley, No.666 Gaoxin Avenue Wuhan East Lake High-Tech Development Zone Wuhan, Hubei 430070, CN
Inventors:
丁奇 DING, Qi; CN
张占东 ZHANG, Zhandong; CN
王丽 WANG, Li; CN
Agent:
广州三环专利商标代理有限公司 SCIHEAD IP LAW FIRM; 中国广东省广州市 越秀区先烈中路80号汇华商贸大厦1508室 Room 1508 Huihua Commercial & Trade Building No. 80 XianLie Zhong Road, Yuexiu District Guangzhou, Guangdong 510070, CN
Priority Data:
201710899582.528.09.2017CN
Title (EN) METHOD FOR PREPARING THIN FILM TRANSISTOR, MASK, THIN FILM TRANSISTOR, AND DISPLAY DEVICE
(FR) PROCÉDÉ DE PRÉPARATION DE TRANSISTOR À COUCHES MINCES, MASQUE, TRANSISTOR À COUCHES MINCES ET DISPOSITIF D’AFFICHAGE
(ZH) 薄膜晶体管的制备方法、光罩、薄膜晶体管及显示装置
Abstract:
(EN) A method for preparing a thin film transistor. The method comprises: providing a substrate (2), forming a film layer (4) on the substrate, and coating a photoresist material onto the film layer to form a photoresist layer (5); and exposing the photoresist layer using a mask (10), wherein the mask comprises a center region (101) and an edge region (102). The edge region surrounds the center region, and the thickness of the center region is greater than the thickness of the edge region. During the exposure process of the photoresist layer, the load effect is counteracted by the thickness of the center region being greater than the thickness of the edge region, such that the film layer has a uniform thickness. Also provided are a mask, a thin film transistor and a display device.
(FR) L'invention concerne un procédé de préparation d'un transistor à couches minces. Le procédé consiste à : utiliser un substrat (2), former une couche pelliculaire (4) sur le substrat, et appliquer un revêtement d'un matériau de résine photosensible sur la couche pelliculaire pour former une couche de résine photosensible (5) ; et exposer la couche de résine photosensible à l'aide d'un masque (10), le masque comprenant une région centrale (101) et une région de bord (102). La région de bord entoure la région centrale, et l'épaisseur de la région centrale est supérieure à l'épaisseur de la région de bord. Pendant le processus d'exposition de la couche de résine photosensible, l'effet de charge est compensé par l'épaisseur de la région centrale supérieure à l'épaisseur de la région de bord, de sorte que la couche pelliculaire ait une épaisseur uniforme. L'invention concerne également un masque, un transistor à couches minces et un dispositif d'affichage.
(ZH) 一种薄膜晶体管的制备方法,包括:提供基板(2),基板上形成膜层(4),将光阻材料涂布在膜层上形成光阻层(5);使用光罩(10)对光阻层进行曝光处理,光罩包括中心区域(101)和边缘区域(102),边缘区域包围中心区域,中心区域的厚度大于边缘区域的厚度,在对光阻层曝光处理过程中,通过中心区域的厚度大于边缘区域的厚度,抵消显影过程中的负载效应,使得膜层的厚度均匀。还提供了一种光罩、薄膜晶体管及显示装置。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)