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1. (WO2019061714) MANUFACTURING METHOD OF TFT ARRAY SUBSTRATE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/061714 International Application No.: PCT/CN2017/110325
Publication Date: 04.04.2019 International Filing Date: 10.11.2017
IPC:
G03F 1/00 (2012.01) ,G03F 9/00 (2006.01) ,H01L 27/12 (2006.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1
Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
9
Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12
the substrate being other than a semiconductor body, e.g. an insulating body
Applicants:
深圳市华星光电半导体显示技术有限公司 SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD. [CN/CN]; 中国广东省深圳市 光明新区公明街道塘明大道9-2号 NO.9-2 Tangming Road, Gongming Street, Guangming New District Shenzhen, Guangdong 518132, CN
Inventors:
赵阳 ZHAO, Yang; CN
Agent:
深圳翼盛智成知识产权事务所(普通合伙) ESSEN PATENT & TRADEMARK AGENCY; 中国广东省深圳市 福田区深南大道6021号喜年中心A座1709-1711 Hailrun Complex Block A Room 1709-1711 No.6021 Shennan Blvd, Futian District ShenZhen, Guangdong 518040, CN
Priority Data:
201710885982.027.09.2017CN
Title (EN) MANUFACTURING METHOD OF TFT ARRAY SUBSTRATE
(FR) PROCÉDÉ DE FABRICATION D'UN SUBSTRAT DE RÉSEAU TFT
(ZH) TFT阵列基板的制作方法
Abstract:
(EN) A manufacturing method of a TFT array substrate comprises: providing a substrate; sequentially depositing, on a surface of the substrate, a gate metal layer, an insulation layer and a metal oxidation layer; forming a first metal layer on a surface of a metal oxide layer; and depositing a photoresist layer on a surface of the first metal layer, and using a photomask process on the first metal layer to form a second metal layer, a channel being arranged in the second metal layer, wherein a portion of a photomask perpendicular to the channel of the second metal layer protrudes out of the second metal layer.
(FR) La présente invention a trait à un procédé de fabrication d'un substrat de réseau TFT qui consiste : à utiliser un substrat ; à déposer de manière séquentielle, sur une surface du substrat, une couche de métal de grille, une couche d'isolation et une couche d'oxydation métallique ; à former une première couche métallique sur une surface d'une couche d'oxyde métallique ; et à déposer une couche de résine photosensible sur une surface de la première couche métallique, et à utiliser un processus à masque photographique sur cette première couche métallique pour former une seconde couche métallique, un canal étant disposé dans la seconde couche métallique, une partie d'un masque photographique perpendiculaire au canal de ladite seconde couche métallique dépassant de cette seconde couche métallique.
(ZH) 一种TFT阵列基板的制作方法,包括:提供一基板;在基板表面依次沉积栅极金属、绝缘层和金属氧化层;在金属氧化物层表面形成第一金属层;在第一金属层表面沉积光阻层,对第一金属层实施光罩制程以形成第二金属层,第二金属层中设有沟道;其中,光罩垂直于第二金属层沟道的部分突出于第二金属层设计。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)