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1. (WO2019061216) TRANSISTOR DEVICE WITH LOCAL P-TYPE CAP LAYER
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Pub. No.: WO/2019/061216 International Application No.: PCT/CN2017/104186
Publication Date: 04.04.2019 International Filing Date: 29.09.2017
IPC:
H01L 29/78 (2006.01) ,H01L 29/06 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
06
characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
Applicants:
英诺赛科(珠海)科技有限公司 INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD. [CN/CN]; 中国广东省珠海市 唐家湾镇哈工大路1号1栋C106 #C106, Unit 1, No.1 Hagongda Rd., Tangjiawan Town Zhuhai, Guangdong 519085, CN
Inventors:
魏进 WEI, Jin; CN
金峻渊 KIM, Jun-Youn; CN
Agent:
珠海智专专利商标代理有限公司 INNOPAT INTELLECTUAL PROPERTY CO., LTD.; 中国广东省珠海市 南屏坪岚路南屏企业大厦第六层 6/F, Nanping Group Building, Pinglan Road, Nanping Zhuhai, Guangdong 519060, CN
Priority Data:
201710895438.428.09.2017CN
Title (EN) TRANSISTOR DEVICE WITH LOCAL P-TYPE CAP LAYER
(FR) DISPOSITIF DE TRANSISTOR AVEC COUCHE DE COIFFE DE TYPE P LOCALE
(ZH) 具有局部P型帽层的晶体管器件
Abstract:
(EN) A transistor device with a local P-type cap layer. The transistor device comprises a substrate (121), a transition layer (122), a channel layer (123), a barrier layer (124), and a source electrode (11), a gate electrode (12), a drain electrode (13) and a P-type cap layer, which are located above the barrier layer, wherein the P-type cap layer comprises at least one first P-type region (14) and at least one second P-type region (15); the first P-type region and the second P-type region are adjacent to each other and are both located between the gate electrode and the drain electrode; the first of the first P-type regions, from the gate electrode to the drain electrode, is electrically connected to the source electrode; the doping surface concentration of a P-type impurity in the first P-type region is greater than the doping surface concentration of the P-type impurity in the second P-type region, and is also greater than the two-dimensional electron gas surface concentration below the first P-type region; and the doping surface concentration of the P-type impurity in the second P-type region is less than the two-dimensional electron gas surface concentration below the second P-type region.
(FR) L'invention concerne un dispositif de transistor ayant une couche de coiffe de type P locale. Le dispositif de transistor comprend un substrat (121), une couche de transition (122), une couche de canal (123), une couche barrière (124), et une électrode de source (11), une électrode de grille (12), une électrode de drain (13) et une couche de capuchon de type P, qui sont situées au-dessus de la couche barrière, la couche de coiffe de type P comprenant au moins une première région de type P (14) et au moins une seconde région de type P (15) ; la première région de type P et la seconde région de type P sont adjacentes l'une à l'autre et sont toutes deux situées entre l'électrode de grille et l'électrode de drain ; la première des premières régions de type P, de l'électrode de grille à l'électrode de drain, est connectée électriquement à l'électrode de source ; la concentration de surface de dopage d'une impureté de type P dans la première région de type P est supérieure à la concentration de surface de dopage de l'impureté de type P dans la seconde région de type P, et est également supérieure à la concentration de surface de gaz d'électrons bidimensionnel au-dessous de la première région de type P ; et la concentration de surface de dopage de l'impureté de type P dans la seconde région de type P est inférieure à la concentration de surface de gaz d'électrons bidimensionnel au-dessous de la seconde région de type P.
(ZH) 一种具有局部P型帽层的晶体管器件,包括衬底(121)、过渡层(122)、沟道层(123)、势垒层(124)以及位于势垒层上方的源极(11)、栅极(12)、漏极(13)和P型帽层,P型帽层包括至少一个第一P型区(14)和至少一个第二P型区(15),第一P型区和第二P型区邻接且均位于栅极和漏极之间,自栅极至漏极,首个第一P型区与源极电连接;第一P型区中P型杂质的掺杂面浓度大于第二P型区中P型杂质的掺杂面浓度,同时大于第一P型区下方的二维电子气面浓度,第二P型区中P型杂质的掺杂面浓度小于第二P型区下方的二维电子气面浓度。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)