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1. (WO2019060942) A NEUROMORPHIC SINGLE PHOTON AVALANCHE DETECTOR (SPAD) ARRAY MICROCHIP
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Pub. No.: WO/2019/060942 International Application No.: PCT/AU2018/000187
Publication Date: 04.04.2019 International Filing Date: 27.09.2018
IPC:
H01L 27/146 (2006.01) ,G01J 1/42 (2006.01) ,H01L 31/107 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144
Devices controlled by radiation
146
Imager structures
G PHYSICS
01
MEASURING; TESTING
J
MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
1
Photometry, e.g. photographic exposure meter
42
using electric radiation detectors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
10
characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101
Devices sensitive to infra-red, visible or ultra-violet radiation
102
characterised by only one potential barrier or surface barrier
107
the potential barrier working in avalanche mode, e.g. avalanche photodiode
Applicants:
THE COMMONWEALTH OF AUSTRALIA [AU/AU]; West Avenue Edinburgh SA 5111, AU
Inventors:
DELIC, Dennis Victor; AU
AFSHAR, Saeed; AU
Agent:
MADDERNS; GPO Box 2752 Adelaide, South Australia 5001, AU
Priority Data:
201790392627.09.2017AU
Title (EN) A NEUROMORPHIC SINGLE PHOTON AVALANCHE DETECTOR (SPAD) ARRAY MICROCHIP
(FR) MICROPUCE À RÉSEAU DE DÉTECTEURS D'AVALANCHE MONOPHOTONIQUE (SPAD) NEUROMORPHIQUE
Abstract:
(EN) Described is a Single-Photon Avalanche Diode (SPAD) array microchip comprising: a plurality of SPAD sensors; and a triggering circuit configured to detect and read out the triggering order of SPAD sensors over a timing interval wherein the timing interval comprises one or more frames. An event based neuromorphic SPAD array microchip is also described. The chip architecture and triggering methodology takes a local group of SPAD sensors connected in a certain way and by using simple digital circuits emulating how neurons behave, patterns within a local receptive field are identified. Only when these unique patterns or features are identified are "events" triggered for each receptive field in the order they occur, or in an asynchronous manner. Each neuromorphic circuit (or collection of silicon neurons) act over overlapping receptive fields, and are tiled across the entire visual spatial field of the SPAD array to a form a convolution layer.
(FR) L'invention concerne une micropuce à réseau de diodes à avalanche monophotonique (SPAD) comprenant : une pluralité de capteurs SPAD ; et un circuit de déclenchement configuré pour détecter et lire l'ordre de déclenchement de capteurs SPAD sur un intervalle de temporisation, l'intervalle de temporisation comprenant une ou plusieurs trames. L'invention concerne également une micropuce à réseau SPAD neuromorphique basée sur un événement. L'architecture de puce et la méthodologie de déclenchement prennent un groupe local de capteurs SPAD connectés d'une certaine manière et, en utilisant des circuits numériques simples émulant la manière dont les neurones se comportent, des motifs à l'intérieur d'un champ de réception local sont identifiés. Ce n'est que lorsque ces motifs ou caractéristiques uniques sont identifiés que des « événements » sont déclenchés pour chaque champ de réception dans l'ordre dans lequel ils se produisent ou d'une manière asynchrone. Chaque circuit neuromorphique (ou collecte de neurones de silicium) agit sur des champs de réception se chevauchant et sont en mosaïque sur l'ensemble du champ spatial visuel du réseau SPAD pour former une couche de convolution.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)