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1. WO2019059951 - SPIN HALL MEMORY WITH LOW RESISTANCE INTERCONNECT

Publication Number WO/2019/059951
Publication Date 28.03.2019
International Application No. PCT/US2017/053292
International Filing Date 25.09.2017
IPC
G11C 11/16 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
H01L 43/08 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08Magnetic-field-controlled resistors
H01L 43/06 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
06Hall-effect devices
CPC
G11C 11/161
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
161details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
G11C 11/1675
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
165Auxiliary circuits
1675Writing or programming circuits or methods
H01L 43/02
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
02Details
H01L 43/08
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
08Magnetic-field-controlled resistors
Applicants
  • INTEL CORPORATION [US]/[US]
Inventors
  • ALLEN, Gary
  • GOSAVI, Tanay
  • O'BRIEN, Kevin
  • MANIPATRUNI, Sasikanth
Agents
  • MUGAL, Usman
Priority Data
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) SPIN HALL MEMORY WITH LOW RESISTANCE INTERCONNECT
(FR) MÉMOIRE À EFFET HALL DE SPIN AVEC INTERCONNEXION À FAIBLE RÉSISTANCE
Abstract
(EN)
An apparatus is provided which comprises: a magnetic junction; a first layer exhibiting spin orbit coupling properties, wherein the first layer is adjacent to the magnetic junction, wherein the first layer includes a first side and a second side, wherein the first and second sides are aligned with first and second sides of the magnetic junction, respectively; a second layer comprising metal, wherein the second layer has a first side which is adjacent to the first side of the first layer, and wherein the second layer has a second side which is adjacent to the second side of the first layer.
(FR)
L'invention concerne un appareil qui comprend : une jonction magnétique; une première couche présentant des propriétés de couplage spin-orbite, la première couche étant adjacente à la jonction magnétique, la première couche comprenant un premier côté et un second côté, les premier et second côtés étant alignés avec des premier et second côtés de la jonction magnétique, respectivement; une seconde couche comprenant du métal, la seconde couche comportant un premier côté qui est adjacent au premier côté de la première couche, et la seconde couche comportant un second côté qui est adjacent au second côté de la première couche.
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