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1. (WO2019059772) DOPANT ENHANCED SOLAR CELL AND METHOD OF MANUFACTURING THEREOF
Latest bibliographic data on file with the International BureauSubmit observation

Pub. No.: WO/2019/059772 International Application No.: PCT/NL2018/050632
Publication Date: 28.03.2019 International Filing Date: 24.09.2018
Chapter 2 Demand Filed: 22.07.2019
IPC:
H01L 31/0224 (2006.01) ,H01L 31/0745 (2012.01) ,H01L 31/18 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
Details
0224
Electrodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
06
characterised by at least one potential-jump barrier or surface barrier
072
the potential barriers being only of the PN heterojunction type
0745
comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Applicants:
NEDERLANDSE ORGANISATIE VOOR TOEGEPAST-NATUURWETENSCHAPPELIJK ONDERZOEK TNO [NL/NL]; Anna van Buerenplein 1 2595 DA 's-Gravenhage, NL
Inventors:
STODOLNY, Maciej Krzyszto; NL
ANKER, John; NL
KOPPES, Martien; NL
ROMIJN, Ingrid Gerdina; NL
GEERLIGS, Lambert Johan; NL
Agent:
NEDERLANDSCH OCTROOIBUREAU; P.O. Box 29720 2502 LS The Hague, NL
Priority Data:
201961422.09.2017NL
Title (EN) DOPANT ENHANCED SOLAR CELL AND METHOD OF MANUFACTURING THEREOF
(FR) CELLULE SOLAIRE AMÉLIORÉE PAR DOPANT ET SON PROCÉDÉ DE FABRICATION
Abstract:
(EN) The present invention relates to a dopant enhanced silicon based solar cell and method of manufacturing thereof. The solar cell includes on a surface of the silicon substrate a layer stack (1) including a thin oxide layer (20) and a polysilicon layer (30), the thin oxide layer being arranged as a tunnel oxide layer in-between the surface of the substrate and the polysilicon layer. The solar cell is provided with fire-through metal contacts (50) arranged on the layer stack locally penetrating into the polysilicon layer. The silicon substrate is provided at the side of the surface with a dopant species that creates a dopant profile of a first conductivity type in the silicon substrate. The dopant profile in the silicon substrate has a maximal dopant level between about 1 x 1018 and about 3 x 10 + 19 atoms/ cm3 and a depth of at least 200 nm within the substrate to a dopant atom level of 1 x 10+″ atoms/cm.
(FR) La présente invention concerne une cellule solaire à base de silicium améliorée par dopant et son procédé de fabrication. La cellule solaire comprend sur une surface du substrat de silicium un empilement de couches (1) comprenant une couche d'oxyde mince (20) et une couche de polysilicium (30), la couche d'oxyde mince étant agencée sous la forme d'une couche d'oxyde tunnel entre la surface du substrat et la couche de polysilicium. La cellule solaire est pourvue de contacts métalliques traversants (50) disposés sur l'empilement de couches pénétrant localement dans la couche de polysilicium. Le substrat de silicium est disposé sur le côté de la surface avec une espèce dopante qui crée un profil de dopant d'un premier type de conductivité dans le substrat de silicium. Le profil de dopant dans le substrat de silicium a un niveau de dopant maximal entre environ 1 x 1018 et environ 3 x 10+19atomes/cm et une profondeur d'au moins 200 nm à l'intérieur du substrat à un niveau d'atomes dopants de 1 x 10 ÷ " atomes/cm.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)