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1. WO2019059051 - PIEZOELECTRIC THIN FILM ELEMENT

Publication Number WO/2019/059051
Publication Date 28.03.2019
International Application No. PCT/JP2018/033670
International Filing Date 11.09.2018
IPC
H01L 41/319 2013.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
22Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
31Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base
314by depositing piezo-electric or electrostrictive layers, e.g. aerosol or screen printing
319using intermediate layers, e.g. for growth control
B81B 3/00 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
3Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
C23C 14/06 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06characterised by the coating material
H01L 41/047 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
04of piezo-electric or electrostrictive elements
047Electrodes
H01L 41/187 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
16Selection of materials
18for piezo-electric or electrostrictive elements
187Ceramic compositions
CPC
B81B 3/00
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
3Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
C23C 14/06
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06characterised by the coating material
H01L 41/047
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
04of piezo-electric or electrostrictive devices
047Electrodes ; or electrical connection arrangements
H01L 41/0478
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
04of piezo-electric or electrostrictive devices
047Electrodes ; or electrical connection arrangements
0477Conductive materials
0478the principal material being non-metallic, e.g. oxide or carbon based
H01L 41/083
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08Piezo-electric or electrostrictive devices
083having a stacked or multilayer structure
H01L 41/187
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
16Selection of materials
18for piezo-electric or electrostrictive devices ; , e.g. bulk piezo-electric crystals
187Ceramic compositions ; , i.e. synthetic inorganic polycrystalline compounds incl. epitaxial, quasi-crystalline materials
Applicants
  • TDK株式会社 TDK CORPORATION [JP]/[JP]
Inventors
  • 木村 純一 KIMURA Junichi
Agents
  • 長谷川 芳樹 HASEGAWA Yoshiki
  • 黒木 義樹 KUROKI Yoshiki
  • 三上 敬史 MIKAMI Takafumi
Priority Data
2017-18272622.09.2017JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) PIEZOELECTRIC THIN FILM ELEMENT
(FR) ÉLÉMENT DE FILM MINCE PIÉZOÉLECTRIQUE
(JA) 圧電薄膜素子
Abstract
(EN)
Provided is a piezoelectric thin film element in which lattice mismatch between a piezoelectric thin film and a lower electrode layer (a first electrode layer) is reduced. The piezoelectric thin film element 10 is provided with a first electrode layer 6a and a piezoelectric thin film 2 layered directly on the first electrode layer 6a. The first electrode layer 6a contains an alloy comprising two or more types of metal elements. The first electrode layer 6a has a body-centered cubic lattice structure. The piezoelectric thin film 2 has a wurtzite structure.
(FR)
L'invention concerne un élément de film mince piézoélectrique dans lequel une désadaptation de réseau entre un film mince piézoélectrique et une couche d'électrode inférieure (une première couche d'électrode) est réduite. L'élément de film mince piézoélectrique 10 comprend une première couche d'électrode 6a et un film mince piézoélectrique 2 stratifié directement sur la première couche d'électrode 6a. La première couche d'électrode 6a contient un alliage comprenant deux ou plusieurs types d'éléments métalliques. La première couche d'électrode 6a a une structure de réseau cubique centrée sur le corps. Le film mince piézoélectrique 2 présente une structure de wurtzite.
(JA)
圧電薄膜と下部電極層(第一電極層)との間の格子不整合が低減された圧電薄膜素子が提供される。圧電薄膜素子10は、第一電極層6aと、第一電極層6aに直接積層された圧電薄膜2と、を備え、第一電極層6aが、二種以上の金属元素から構成される合金を含み、第一電極層6aが、体心立方格子構造を有し、圧電薄膜2が、ウルツ鉱型構造を有する。
Latest bibliographic data on file with the International Bureau