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1. WO2019058477 - METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING DEVICE AND PROGRAM

Publication Number WO/2019/058477
Publication Date 28.03.2019
International Application No. PCT/JP2017/034054
International Filing Date 21.09.2017
IPC
H01L 21/31 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
CPC
H01L 21/31
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
Applicants
  • 株式会社KOKUSAI ELECTRIC KOKUSAI ELECTRIC CORPORATION [JP]/[JP]
Inventors
  • 山下 広樹 YAMASHITA Hiroki
  • 新田 貴史 NITTA Takafumi
  • 島本 聡 SHIMAMOTO Satoshi
Agents
  • 福岡 昌浩 FUKUOKA Masahiro
  • 阿仁屋 節雄 ANIYA Setuo
Priority Data
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING DEVICE AND PROGRAM
(FR) PROCÉDÉ DE FABRICATION DE DISPOSITIF À SEMI-CONDUCTEURS, DISPOSITIF DE TRAITEMENT DE SUBSTRAT ET PROGRAMME
(JA) 半導体装置の製造方法、基板処理装置およびプログラム
Abstract
(EN)
According to the present invention, a film including a cyclic structure comprising silicon and carbon, nitrogen, and oxygen is formed on a substrate by performing, under the conditions in which at least a portion of the cyclic structure comprising silicon and carbon is held, a cycle a prescribed number of times in which a step for feeding raw materials including the cyclic structure comprising silicon and carbon, and halogen to the substrate; a step for providing a nitriding agent to the substrate; and a step for providing an oxidizing agent to the substrate are performed non-simultaneously.
(FR)
Selon la présente invention, un film comprenant une structure cyclique comprenant du silicium et du carbone, de l'azote et de l'oxygène est formé sur un substrat par réalisation, dans les conditions dans lesquelles au moins une partie de la structure cyclique comprenant du silicium et du carbone est maintenue, un cycle d'un nombre prescrit de fois dans lequel une étape consistant à fournir des matières premières comprenant la structure cyclique comprenant du silicium et du carbone, et un halogène au substrat ; une étape consistant à fournir un agent de nitruration au substrat ; et une étape consistant à fournir un agent oxydant au substrat sont effectués de manière non simultanée.
(JA)
基板に対して、シリコンと炭素とで構成される環状構造およびハロゲンを含む原料を供給する工程と、基板に対して窒化剤を供給する工程と、基板に対して酸化剤を供給する工程と、を非同時に行うサイクルを、シリコンと炭素とで構成される環状構造の少なくとも一部が保持される条件下で、所定回数行うことにより、基板上に、シリコンと炭素とで構成される環状構造、窒素、および酸素を含む膜を形成する。
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