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1. WO2019058440 - CHARGED PARTICLE BEAM DEVICE

Publication Number WO/2019/058440
Publication Date 28.03.2019
International Application No. PCT/JP2017/033854
International Filing Date 20.09.2017
IPC
H01J 37/22 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
02Details
22Optical or photographic arrangements associated with the tube
H01J 37/24 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
02Details
24Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
H01J 37/244 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
02Details
244Detectors; Associated components or circuits therefor
CPC
H01J 2237/0048
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
2237Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
004Charge control of objects or beams
0048Charging arrangements
H01J 2237/206
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
2237Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
20Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
206Modifying objects while observing
H01J 2237/221
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
2237Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
22Treatment of data
221Image processing
H01J 37/222
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
02Details
22Optical or photographic arrangements associated with the tube
222Image processing arrangements associated with the tube
H01J 37/244
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
02Details
244Detectors; Associated components or circuits therefor
H01J 37/29
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
26Electron or ion microscopes; Electron or ion diffraction tubes
29Reflection microscopes
Applicants
  • 株式会社日立ハイテク HITACHI HIGH-TECH CORPORATION [JP]/[JP]
Inventors
  • 尾方 智彦 OGATA Tomohiko
  • 長谷川 正樹 HASEGAWA Masaki
  • 小貫 勝則 ONUKI Katsunori
  • 兼岡 則幸 KANEOKA Noriyuki
  • 村越 久弥 MURAKOSHI Hisaya
Agents
  • ポレール特許業務法人 POLAIRE I.P.C.
Priority Data
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) CHARGED PARTICLE BEAM DEVICE
(FR) DISPOSITIF À FAISCEAU DE PARTICULES CHARGÉES
(JA) 荷電粒子線装置
Abstract
(EN)
In order to optimize defect contrast in a charged particle beam device that inverts charged particles directly above a sample and observes the electrons, this charged particle beam device is provided with a charged particle source (20), an electron gun control device (41) which applies a first voltage to the charged particle source, a substrate voltage control device (44) which applies a second voltage to a sample (30), an image forming optical system which includes an imaging lens (22) for imaging charged particles incident from the direction of the sample, a detector which includes a camera (32) for detecting the charged particles, and an image processing device (45) which processes the detected signal, wherein the imaging optical system is configured so as not to image secondary electrons emitted from the sample, but forms an image with mirror electrons bounced back by the electric field formed on the sample by means of the potential difference between the first and the second voltages. The image processing device (45) generates a control signal for controlling the potential difference on the basis of the acquired signal, and optimizes defect contrast by controlling the reflection surface of the mirror electrons.
(FR)
La présente invention vise à optimiser le contraste de défaut dans un dispositif à faisceau de particules chargées qui inverse des particules chargées directement au-dessus d'un échantillon et observe les électrons. À cette fin, la présente invention porte sur un dispositif à faisceau de particules chargées qui est pourvu d'une source de particules chargées (20), d'un dispositif de commande de canon à électrons (41) qui applique une première tension à la source de particules chargées, d'un dispositif de commande de tension de substrat (44) qui applique une seconde tension à un échantillon (30), d'un système optique de formation d'image qui comprend une lentille d'imagerie (22) destinée à imager des particules chargées incidentes à partir de la direction de l'échantillon, d'un détecteur qui comprend une caméra (32) destinée à détecter les particules chargées, et d'un dispositif de traitement d'image (45) qui traite le signal détecté, le système optique d'imagerie étant configuré de sorte à ne pas imager des électrons secondaires émis à partir de l'échantillon, mais forme une image avec des électrons de miroir renvoyés par le champ électrique formé sur l'échantillon au moyen de la différence de potentiel entre les première et seconde tensions. Le dispositif de traitement d'image (45) génère un signal de commande pour commander la différence de potentiel sur la base du signal acquis et optimise un contraste de défaut par commande de la surface de réflexion des électrons de miroir.
(JA)
試料直上で荷電粒子を反転させて観察する荷電粒子線装置において、欠陥コントラストを最適化する。荷電粒子源(20)と、荷電粒子源に第1の電圧を印加する電子銃制御装置(41)と、試料(30)に第2の電圧を印加する基板電圧制御装置(44)と、試料の方向から入射する荷電粒子を結像する結像レンズ(22)を含む結像光学系と、荷電粒子を検出するカメラ(32)を含む検出器と、検出信号を処理する画像処理装置(45)とを備え、結像光学系は試料より放出された二次電子を結像しないように構成されると共に、第1及び第2の電圧の電位差により試料上に形成された電界に跳ね返されたミラー電子による像を形成する。画像処理装置(45)は、取得信号に基づいて電位差を制御する制御信号を生成、ミラー電子の反射面を制御して欠陥コントラストを最適化する。
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