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1. WO2019054311 - ACTIVE LIGHT RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR FORMING PATTERN, AND METHOD FOR PRODUCING ELECTRONIC DEVICE

Publication Number WO/2019/054311
Publication Date 21.03.2019
International Application No. PCT/JP2018/033328
International Filing Date 07.09.2018
IPC
G03F 7/039 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
039Macromolecular compounds which are photodegradable, e.g. positive electron resists
G03F 7/004 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
G03F 7/20 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
CPC
G03F 7/004
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
G03F 7/039
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
039Macromolecular compounds which are photodegradable, e.g. positive electron resists
G03F 7/20
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
Applicants
  • 富士フイルム株式会社 FUJIFILM CORPORATION [JP]/[JP]
Inventors
  • 吉村 務 YOSHIMURA Tsutomu
  • 米久田 康智 YONEKUTA Yasunori
  • 畠山 直也 HATAKEYAMA Naoya
  • 東 耕平 HIGASHI Kohei
  • 西田 陽一 NISHIDA Yoichi
Agents
  • 特許業務法人航栄特許事務所 KOH-EI PATENT FIRM, P.C.
Priority Data
2017-17614713.09.2017JP
2018-01542431.01.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) ACTIVE LIGHT RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR FORMING PATTERN, AND METHOD FOR PRODUCING ELECTRONIC DEVICE
(FR) COMPOSITION DE RÉSINE SENSIBLE AUX RAYONS LUMINEUX ACTINIQUES OU SENSIBLE AU RAYONNEMENT, FILM DE RÉSERVE, PROCÉDÉ PERMETTANT DE FORMER UN MOTIF ET PROCÉDÉ PERMETTANT DE PRODUIRE UN DISPOSITIF ÉLECTRONIQUE
(JA) 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、及び電子デバイスの製造方法
Abstract
(EN)
The present invention provides an active light ray-sensitive or radiation-sensitive resin composition that contains a resin (A), wherein the resin (A) contains acidic group-containing repeating units and acid-dissociable group-containing repeating units, the content of acidic group-containing repeating units is 15 mol% or more of the overall amount of repeating units in the resin (A), the content of acid-dissociable group-containing repeating units is more than 20 mol% of the overall amount of repeating units in the resin (A), the glass transition temperature of the resin (A) is 145ºC or lower, and the resin composition is used to form a film having a thickness of 2 μm or more. Also provided are a resist film obtained using the active light ray-sensitive or radiation-sensitive resin composition, a method for forming a pattern, and a method for producing an electronic device.
(FR)
La présente invention concerne une composition de résine sensible aux rayons lumineux actifs ou sensible aux rayonnements qui contient une résine (A), la résine (A) contenant des unités de répétition contenant un groupe acide et des unités de répétition contenant un groupe dissociable par un acide, la teneur en unités de répétition contenant un groupe acide étant égale ou supérieure à 15 % en moles de la quantité globale d'unités de répétition dans la résine (A), la teneur en unités de répétition contenant un groupe dissociable par un acide étant supérieure à 20 % en moles de la quantité globale d'unités de répétition dans la résine (A), la température de transition vitreuse de la résine (A) étant égale ou inférieure à 145 °C et la composition de résine étant utilisée pour former un film ayant une épaisseur égale ou supérieure à 2 µm. De plus, la présente invention porte : sur un film de réserve obtenu en utilisant ladite composition de résine sensible aux rayons lumineux actiniques ou sensible au rayonnement ; sur un procédé permettant de former un motif ; et sur un procédé permettant de produire un dispositif électronique.
(JA)
本発明により、樹脂(A)を含有する感活性光線性又は感放射線性樹脂組成物であって、 上記樹脂(A)は、酸性基を有する繰り返し単位と、酸分解性基を有する繰り返し単位とを含み、 上記酸性基を有する繰り返し単位の含有量が、上記樹脂(A)中の全繰り返し単位に対して15モル%以上であり、 上記酸分解性基を有する繰り返し単位の含有量が、上記樹脂(A)中の全繰り返し単位に対して20モル%超であり、 上記樹脂(A)のガラス転移温度が145℃以下であり、 膜厚2μm以上の膜を形成するために用いられる、感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性樹脂組成物を用いたレジスト膜、パターン形成方法、及び電子デバイスの製造方法が提供される。
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