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1. WO2019053877 - SEMICONDUCTOR LIGHT-RECEIVING ELEMENT AND MANUFACTURING METHOD THEREOF

Publication Number WO/2019/053877
Publication Date 21.03.2019
International Application No. PCT/JP2017/033446
International Filing Date 15.09.2017
IPC
H01L 31/107 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101Devices sensitive to infra-red, visible or ultra-violet radiation
102characterised by only one potential barrier or surface barrier
107the potential barrier working in avalanche mode, e.g. avalanche photodiode
CPC
H01L 31/022483
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
022466made of transparent conductive layers, e.g. TCO, ITO layers
022483composed of zinc oxide [ZnO]
H01L 31/05
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
042PV modules or arrays of single PV cells
05Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
H01L 31/054
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
054Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
H01L 31/1075
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101Devices sensitive to infra-red, visible or ultra-violet radiation
102characterised by only one potential barrier or surface barrier
107the potential barrier working in avalanche mode, e.g. avalanche photodiode
1075in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
Y02E 10/52
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
52PV systems with concentrators
Applicants
  • 三菱電機株式会社 MITSUBISHI ELECTRIC CORPORATION [JP]/[JP]
Inventors
  • 竹村 亮太 TAKEMURA Ryota
  • 石村 栄太郎 ISHIMURA Eitaro
  • 山口 晴央 YAMAGUCHI Harunaka
Agents
  • 吉竹 英俊 YOSHITAKE Hidetoshi
  • 有田 貴弘 ARITA Takahiro
Priority Data
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR LIGHT-RECEIVING ELEMENT AND MANUFACTURING METHOD THEREOF
(FR) ÉLÉMENT RÉCEPTEUR DE LUMIÈRE À SEMI-CONDUCTEUR ET SON PROCÉDÉ DE FABRICATION
(JA) 半導体受光素子およびその製造方法
Abstract
(EN)
According to the present invention, a multiplication layer (2) on an n-type semiconductor substrate (1) contains Al atoms. An electric field control layer (3) on the multiplication layer (2) has a p-type. The electric field control layer (3) includes a high-concentration region (3H) and a low-concentration region (3L) provided outside the high-concentration region (3H) and having an impurity concentration lower than the impurity concentration of the high-concentration region (3H). A light absorption layer (4) on the electric field control layer (3) has an impurity concentration lower than the impurity concentration of the high-concentration region (3H). A window layer (5) on the light absorption layer (4) has a band gap larger than the band gap of the light absorption layer (4) and has an n-type. A light-receiving region (6) is provided away from an outer edge (ED) of the window layer (5), at least partially faces the high-concentration region (3H) with the window layer (5) and the light absorption layer therebetween, and has a p-type. A guard ring region (7) is separated from the light-receiving region (6) by the window layer (5), reaches the inside of the light absorbing layer (4) by penetrating through the window layer (5), and has a p-type.
(FR)
Selon la présente invention, une couche de multiplication (2) sur un substrat semi-conducteur de type n (1) contient des atomes d'Al. Une couche de commande de champ électrique (3) sur la couche de multiplication (2) a un type p. La couche de commande de champ électrique (3) comprend une région de concentration élevée (3H) et une région de faible concentration (3L) disposée à L'extérieur de la région de concentration élevée (3H) et ayant une concentration d'impuretés inférieure à la concentration en impuretés de la région de concentration élevée (3H). Une couche d'absorption de lumière (4) sur la couche de commande de champ électrique (3) a une concentration d'impuretés inférieure à la concentration en impuretés de la région de concentration élevée (3H). Une couche de fenêtre (5) sur la couche d'absorption de lumière (4) a une bande interdite plus grande que la bande interdite de la couche d'absorption de lumière (4) et a un type n. Une région de réception de lumière (6) est disposée à distance d'un bord externe (ED) de la couche de fenêtre (5), fait au moins partiellement face à la région de concentration élevée (3H) avec la couche de fenêtre (5) et la couche d'absorption de lumière entre celles-ci, et a un type p. Une région d'anneau de garde (7) est séparée de la région de réception de lumière (6) par la couche de fenêtre (5), atteint l'intérieur de la couche d'absorption de lumière (4) en pénétrant à travers la couche de fenêtre (5), et a un type p.
(JA)
n型の半導体基板(1)上の増倍層(2)はAl原子を含有する。増倍層(2)上の電界制御層(3)はp型を有する。電界制御層(3)は、高濃度領域(3H)と、高濃度領域(3H)の外側に設けられ高濃度領域(3H)の不純物濃度よりも低い不純物濃度を有する低濃度領域(3L)とを含む。電界制御層(3)上の光吸収層(4)は、高濃度領域(3H)の不純物濃度よりも低い不純物濃度を有する。光吸収層(4)上の窓層(5)は、光吸収層(4)のバンドギャップよりも大きなバンドギャップを有し、n型を有する。受光領域(6)は、窓層(5)の外縁(ED)から離れて設けられ、窓層(5)および光吸収層(4)を介して高濃度領域(3H)に少なくとも部分的に対向し、p型を有する。ガードリング領域(7)は、窓層(5)によって受光領域(6)から隔てられ、窓層(5)を貫通して光吸収層(4)内に達し、p型を有する。
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