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1. WO2019051780 - WHITE LIGHT LED PACKAGE STRUCTURE AND WHITE LIGHT SOURCE SYSTEM

Publication Number WO/2019/051780
Publication Date 21.03.2019
International Application No. PCT/CN2017/101898
International Filing Date 15.09.2017
IPC
H01L 33/50 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
50Wavelength conversion elements
H01L 33/00 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
CPC
H01L 25/167
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
16the devices being of types provided for in two or more different main groups of H01L27/00 - H01L49/00 ; and H01L51/00; , e.g. forming hybrid circuits
167comprising optoelectronic devices, e.g. LED, photodiodes
H01L 33/504
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
50Wavelength conversion elements
501characterised by the materials, e.g. binder
502Wavelength conversion materials
504Elements with two or more wavelength conversion materials
H01L 33/54
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
52Encapsulations
54having a particular shape
H01L 33/56
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
52Encapsulations
56Materials, e.g. epoxy or silicone resin
H01L 33/60
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
58Optical field-shaping elements
60Reflective elements
H01L 33/62
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Applicants
  • 厦门市三安光电科技有限公司 XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD. [CN]/[CN]
Inventors
  • 黄森鹏 HUANG, Senpeng
  • 时军朋 SHI, Junpeng
  • 黄永特 WONG, Weng-Tack
  • 陈顺意 CHEN, Shunyi
  • 林振端 LIN, Zhen-duan
  • 赵志伟 CHAO, Chih-wei
  • 徐宸科 HSU, Chen-ke
Priority Data
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) WHITE LIGHT LED PACKAGE STRUCTURE AND WHITE LIGHT SOURCE SYSTEM
(FR) STRUCTURE DE BOÎTIER DE DEL À LUMIÈRE BLANCHE ET SYSTÈME D'ÉCLAIRAGE À LUMIÈRE BLANCHE
(ZH) 一种白光LED封装结构以及白光源系统
Abstract
(EN)
Disclosed are a white light LED package structure and a white light source system. The structure comprises: a substrate (100), an LED chip (200) and a wavelength conversion material layer (300), wherein the luminescence peak wavelength of the LED chip is between 400 nm and 425 nm; the luminescence peak wavelength of the wavelength conversion material layer is between 440 nm and 700 nm; and the wavelength conversion material layer absorbs light emitted by the LED chip and emits a white light source. Where P(λ) is the luminescence spectrum of the white light source, S(λ) is the luminescence spectrum of a blackbody radiation having the same colour temperature as the white light source, P(λmax) is the maximum light intensity in 380-780 nm, S(λmax) is the maximum light intensity of the blackbody radiation in 380-780 nm, and D(λ) is a difference value between the spectrum of a white light LED and the spectrum of the blackbody radiation in 510-610 nm, the white light source meets the following condition: D(λ) = P(λ)/P(λmax) - S(λ)/S(λmax), -0.15 < D(λ) < 0.15.
(FR)
La présente invention concerne une structure de boîtier de DEL à lumière blanche et un système d'éclairage à lumière blanche. La structure comprend : un substrat (100), une puce de DEL (200) et une couche de matériau de conversion de longueur d'onde (300), la longueur d'onde de pic de luminescence de la puce de DEL étant comprise entre 400 nm et 425 nm; la longueur d'onde de pic de luminescence de la couche du matériau de conversion de longueur d'onde est comprise entre 440 nm et 700 nm; et la couche du matériau de conversion de longueur d'onde absorbe la lumière émise par la puce de DEL et émet une source de lumière blanche. P(λ) représente le spectre de luminescence de la source de lumière blanche, S(λ) représente le spectre de luminescence d'un rayonnement de corps noir ayant la même température de couleur que la source de lumière blanche, P(λmax) représente l'intensité lumineuse maximale dans la plage de 380 à 780 nm, S(λmax) représente l'intensité lumineuse maximale du rayonnement du corps noir dans la plage de 380 à 780 nm, et D(λ) représente une valeur de différence entre le spectre d'une DEL de lumière blanche et le spectre du rayonnement du corps noir dans la plage de 510 à 610 nm. La source de lumière blanche satisfait la condition suivante : D(λ) = P(λ)/P(λmax) - S(λ)/S(λmax), -0,15 < D(λ) < 0,15.
(ZH)
一种白光LED封装结构以及白光源系统,包括:基板(100),LED芯片(200)以及波长转换材料层(300);LED芯片的发光峰值波长介于400~425nm,波长转换材料层的发光峰值波长介于440~700nm,波长转换材料层吸收由LED芯片射出的光而发出白光源,设白光源的发光光谱为P(λ),与白光源具有相同色温的黑体辐射的发光光谱为S(λ),P(λmax)为380~780nm内的光强最大值,S(λmax)为380~780nm内的黑体辐射的光强最大值,D(λ)为白光LED的光谱与黑体辐射光谱的差异值,在510nm~610nm内,白光源满足:D(λ)=P(λ)/P(λmax)-S(λ)/S(λmax),-0.15<D(λ)<0.15。
Also published as
Latest bibliographic data on file with the International Bureau