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1. (WO2019050715) SELF-ALIGNED STRUCTURES FROM SUB-OXIDES
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Pub. No.: WO/2019/050715 International Application No.: PCT/US2018/048343
Publication Date: 14.03.2019 International Filing Date: 28.08.2018
IPC:
H01L 21/768 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71
Manufacture of specific parts of devices defined in group H01L21/7086
768
Applying interconnections to be used for carrying current between separate components within a device
Applicants:
APPLIED MATERIALS, INC. [US/US]; 3050 Bowers Avenue Santa Clara, California 95054, US
Inventors:
GANDIKOTA, Srinivas; US
ROY, Susmit Singha; US
MALLICK, Abhijit Basu; US
Agent:
BLANKMAN, Jeffrey I.; US
Priority Data:
62/554,30605.09.2017US
Title (EN) SELF-ALIGNED STRUCTURES FROM SUB-OXIDES
(FR) STRUCTURES AUTO-ALIGNÉES À PARTIR DE SOUS-OXYDES
Abstract:
(EN) Methods of producing a self-aligned structure are described. The methods comprise forming a metal sub-oxide film in a substrate feature and oxidizing the sub-oxide film to form a self-aligned structure comprising metal oxide. In some embodiments, a metal film is deposited and then treated to form the metal sub-oxide film. In some embodiments, the process of depositing and treating the metal film to form the metal sub-oxide film is repeated until a predetermined depth of metal sub-oxide film is formed within the substrate feature.
(FR) L'invention concerne des procédés de production d'une structure auto-alignée. Les procédés comprennent la formation d'un film de sous-oxyde métallique dans un élément de substrat et l'oxydation du film de sous-oxyde pour former une structure auto-alignée comprenant de l'oxyde métallique. Dans certains modes de réalisation, un film métallique est déposé puis traité pour former le film de sous-oxyde métallique. Dans certains modes de réalisation, le procédé de dépôt et de traitement du film métallique pour former le film de sous-oxyde métallique est répété jusqu'à ce qu'une profondeur prédéterminée de film de sous-oxyde métallique soit formée à l'intérieur de l'élément de substrat.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)