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1. (WO2019050263) CHANNEL OF ELECTRONIC DEVICE FOR CONTROLLING HEAT TRANSPORT, AND ELECTRONIC DEVICE FOR CONTROLLING HEAT TRANSPORT, COMPRISING SAME
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Pub. No.: WO/2019/050263 International Application No.: PCT/KR2018/010344
Publication Date: 14.03.2019 International Filing Date: 05.09.2018
IPC:
H01L 29/10 (2006.01) ,H01L 29/94 (2006.01) ,H01L 21/324 (2006.01) ,H01L 29/08 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
06
characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
10
with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
86
controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
92
Capacitors with potential-jump barrier or surface barrier
94
Metal-insulator-semiconductors, e.g. MOS
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
324
Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
06
characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
08
with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
Applicants:
경북대학교 산학협력단 KYUNGPOOK NATIONAL UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION [KR/KR]; 대구시 북구 대학로 80 (산격동) 80(Sangyeok-dong), Daehak-ro Buk-gu Daegu 41566, KR
Inventors:
이상욱 LEE, Sangwook; KR
이근형 LEE, Keun Hyung; KR
윤영훈 YUN, Yeonghun; KR
조경국 CHO, Kyung Gook; KR
Agent:
남건필 NAM, Gun Pil; KR
차상윤 CHA, Sang Yun; KR
박종수 PARK, Jong Soo; KR
Priority Data:
10-2017-011430207.09.2017KR
Title (EN) CHANNEL OF ELECTRONIC DEVICE FOR CONTROLLING HEAT TRANSPORT, AND ELECTRONIC DEVICE FOR CONTROLLING HEAT TRANSPORT, COMPRISING SAME
(FR) CANAL DE DISPOSITIF ÉLECTRONIQUE DE RÉGULATION DE TRANSPORT DE CHALEUR, ET DISPOSITIF ÉLECTRONIQUE DE RÉGULATION DE TRANSPORT DE CHALEUR POURVU DUDIT CANAL
(KO) 열 이동을 제어하는 전자 소자의 채널 및 이를 포함하는 열 이동을 제어하는 전자 소자
Abstract:
(EN) The present invention relates to a channel of an electronic device for controlling heat transport, and the electronic device for controlling heat transport, comprising the same. The channel of the electronic device for controlling heat transport is formed from a metal-insulator transition compound doped with a dopant such that a phase transition thereof occurs, by means of an electric field or heat, from a first phase having insulation to a second phase having conductivity, and the thermal conductivity discontinuously increases when a transition occurs from the first phase to the second phase.
(FR) La présente invention porte sur un canal d'un dispositif électronique de régulation de transport de chaleur, et sur le dispositif électronique de régulation de transport de chaleur pourvu dudit canal. Le canal du dispositif électronique de régulation de transport de chaleur est formé d'un composé de transition métal-isolant dopé avec un dopant de telle sorte qu'une transition de phase correspondante se produit, à l'aide d'un champ électrique ou de la chaleur, d'une première phase présentant une isolation à une seconde phase présentant une conductivité, et la conductivité thermique augmente de manière discontinue lorsqu'une telle transition de phase se produit.
(KO) 본 발명은 열 이동을 제어하는 전자 소자의 채널 및 이를 포함하는 열 이동을 제어하는 전자 소자에 관한 것으로, 열 이동을 제어하는 전자 소자의 채널은 도펀트로 도핑된 금속-절연체 전이(metal-insulator transition) 화합물로 형성되어, 절연성을 갖는 제1 상에서 전계나 열에 의해 도전성을 갖는 제2 상으로 상전이 되고, 상기 제1 상에서 상기 제2 상으로 전이될 때 열전도도가 불연속적으로 증가한다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)