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1. (WO2019050233) OXYGEN-RICH VANADIUM OXIDE ELECTROMAGNETIC WAVE SENSOR AND SYSTEM USING SAME
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Pub. No.: WO/2019/050233 International Application No.: PCT/KR2018/010216
Publication Date: 14.03.2019 International Filing Date: 03.09.2018
IPC:
H01L 31/08 (2006.01) ,G01J 1/02 (2006.01) ,H01L 31/0224 (2006.01) ,H01L 31/032 (2006.01) ,H01L 31/048 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
G PHYSICS
01
MEASURING; TESTING
J
MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
1
Photometry, e.g. photographic exposure meter
02
Details
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
Details
0224
Electrodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248
characterised by their semiconductor bodies
0256
characterised by the material
0264
Inorganic materials
032
including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272-H01L31/0312154
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
042
including a panel or array of photoelectric cells, e.g. solar cells
048
encapsulated or with housing
Applicants:
한국전자통신연구원 ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE [KR/KR]; 대전시 유성구 가정로 218 218, Gajeong-ro Yuseong-gu Daejeon 34129, KR
Inventors:
김현탁 KIM, Hyun-Tak; KR
조진철 CHO, Jin Cheol; KR
슬라테티아나 SLUSAR, Tetiana; KR
Agent:
특허법인 고려 KORYO IP & LAW; 서울시 강남구 테헤란로 8길 41 6층 6F, 41, Teheran-ro 8-gil Gangnam-gu Seoul 06239, KR
Priority Data:
10-2017-011357405.09.2017KR
10-2018-009633717.08.2018KR
Title (EN) OXYGEN-RICH VANADIUM OXIDE ELECTROMAGNETIC WAVE SENSOR AND SYSTEM USING SAME
(FR) CAPTEUR D'ONDES ÉLECTROMAGNÉTIQUES À OXYDE DE VANADIUM RICHE EN OXYGÈNE ET SYSTÈME L'UTILISANT
(KO) 산소 리치 바나듐산화물 전자파 센서 및 그 시스템
Abstract:
(EN) Provided are an oxygen-rich vanadium oxide electromagnetic wave sensor and a system using the same. An oxygen-rich vanadium oxide electromagnetic wave sensor according to an embodiment of the present invention comprises: a first material layer comprising silicon doped with an n-type dopant; a second material layer disposed on the first material layer and comprising a vanadium oxide represented by the molecular formula VxOy; a first electrode on the second material layer; and a second electrode on the first material layer or the second material layer, wherein the dopant concentration of the first material layer may be more than 1.0 x 1015 cm-3 but less than 1.0 x 1019 cm-3, and the ratio of y to x may be greater than 2 but smaller than 2.5 in the molecular formula.
(FR) La présente invention concerne un capteur d'ondes électromagnétiques à oxyde de vanadium riche en oxygène et un système l'utilisant. Un capteur d'ondes électromagnétiques à oxyde de vanadium riche en oxygène selon un mode de réalisation de la présente invention comprend : une première couche de matériau comprenant du silicium dopé avec un dopant de type N ; une deuxième couche de matériau disposée sur la première couche de matériau et comprenant un oxyde de vanadium représenté par la formule moléculaire VxOy ; une première électrode sur la deuxième couche de matériau ; et une deuxième électrode sur la première couche de matériau ou sur la deuxième couche de matériau. La concentration de dopant de la première couche de matériau peut être supérieure à 1,0 x 1015 cm-3 mais inférieure à 1,0 x 1019 cm-3, et le rapport de y par x peut être supérieur à 2 mais inférieur à 2,5 dans la formule moléculaire.
(KO) 산소 리치 바나듐산화물 전자파 센서 및 그 시스템이 제공된다. 본 발명의 실시예에 따른 산소 리치 바나듐산화물 전자파 센서는 n형의 도펀트로 도핑된 실리콘을 포함하는 제1 물질 층; 상기 제1 물질 층 상에 배치되고, 분자식 VxOy로 표시되는 바나듐 산화물을 포함하는 제2 물질 층; 상기 제2 물질 층 상의 제1 전극; 및 상기 제1 물질 층 또는 상기 제2 물질 층 상의 제2 전극을 포함하되, 상기 제1 물질 층의 도펀트 농도는 1.0 x 1015 cm-3 보다 크고 1.0 x 1019 cm-3 보다 작고, 상기 분자식에서 x에 대한 y의 비는 2 보다 크고 2.5보다 작을 수 있다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)