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1. (WO2019049823) ACOUSTIC WAVE FILTER DEVICE AND COMPOSITE FILTER DEVICE
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Pub. No.: WO/2019/049823 International Application No.: PCT/JP2018/032601
Publication Date: 14.03.2019 International Filing Date: 03.09.2018
IPC:
H03H 9/25 (2006.01) ,H03H 9/145 (2006.01) ,H03H 9/17 (2006.01) ,H03H 9/64 (2006.01) ,H03H 9/72 (2006.01)
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
H
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9
Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
25
Constructional features of resonators using surface acoustic waves
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
H
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9
Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
02
Details
125
Driving means, e.g. electrodes, coils
145
for networks using surface acoustic waves
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
H
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9
Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
15
Constructional features of resonators consisting of piezo-electric or electrostrictive material
17
having a single resonator
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
H
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9
Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
46
Filters
64
using surface acoustic waves
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
H
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9
Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
70
Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common or source
72
Networks using surface acoustic waves
Applicants:
株式会社村田製作所 MURATA MANUFACTURING CO., LTD. [JP/JP]; 京都府長岡京市東神足1丁目10番1号 10-1, Higashikotari 1-chome, Nagaokakyo-shi, Kyoto 6178555, JP
Inventors:
高峰 裕一 TAKAMINE, Yuichi; JP
Agent:
特許業務法人 宮▲崎▼・目次特許事務所 MIYAZAKI & METSUGI; 大阪府大阪市中央区常盤町1丁目3番8号 中央大通FNビル Chuo Odori FN Bldg., 3-8, Tokiwamachi 1-chome, Chuo-ku, Osaka-shi, Osaka 5400028, JP
Priority Data:
2017-17189107.09.2017JP
Title (EN) ACOUSTIC WAVE FILTER DEVICE AND COMPOSITE FILTER DEVICE
(FR) DISPOSITIF DE FILTRE À ONDES ACOUSTIQUES, FILTRE ET DISPOSITIF DE FILTRE COMPOSITE
(JA) 弾性波フィルタ装置及び複合フィルタ装置
Abstract:
(EN) Provided is an acoustic wave filter device which has excellent linearity, and which has a structure wherein layers are laminated between a substrate that is formed from a semiconductor and a piezoelectric layer, said layers being composed of a different material. An acoustic wave filter device which comprises a plurality of acoustic wave resonators; and each one of the acoustic wave resonators comprises a piezoelectric layer 16 and an IDT electrode 17 which is provided on the piezoelectric layer 16. A low acoustic velocity film 15 and a substrate 14 that is formed from a semiconductor are laminated on a surface of the piezoelectric layer 16, said surface being on the reverse side of the surface on which the IDT electrode 17 is provided; and a routing wire 13, which is connected to an antenna terminal 3, is arranged on an insulating film 12 that is provided on the piezoelectric layer 16.
(FR) Cette invention concerne un dispositif de filtre à ondes acoustiques qui a une excellente linéarité, et qui a une structure dans laquelle des couches sont stratifiées entre un substrat qui est formé à partir d'un semi-conducteur et une couche piézoélectrique, lesdites couches étant composées d'un matériau différent. Plus particulièrement, l'invention concerne un dispositif de filtre à ondes acoustiques qui comprend une pluralité de résonateurs à ondes acoustiques, et chacun des résonateurs à ondes acoustiques comprenant une couche piézoélectrique (16) et une électrode interdigitée (17) qui est disposée sur la couche piézoélectrique (16). Un film à faible vitesse acoustique (15) et un substrat (14) qui est formé à partir d'un semi-conducteur sont stratifiés sur une surface de la couche piézoélectrique (16), ladite surface étant sur le côté inverse de la surface sur laquelle est disposée l'électrode interdigitée (17) ; et un fil de routage (13), qui est connecté à une borne d'antenne (3), est disposé sur un film isolant (12) qui est disposé sur la couche piézoélectrique (16).
(JA) 半導体からなる基板と圧電体層との間に他の材料が積層されている構造を有する弾性波フィルタ装置であって、線形性に優れた弾性波フィルタ装置を提供する。 複数の弾性波共振子を有し、各弾性波共振子が、圧電体層16と、圧電体層16上に設けられたIDT電極17とを有し、圧電体層16のIDT電極17が設けられている側とは逆の面に低音速膜15及び半導体からなる基板14が積層されており、アンテナ端子3に接続される引き回し配線13が、圧電体層16上に設けられた絶縁膜12上に配置されている、弾性波フィルタ装置。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)