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1. (WO2019049817) SENSOR CHIP, TARGET SUBSTANCE DETECTION DEVICE, AND TARGET SUBSTANCE DETECTION METHOD
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Pub. No.: WO/2019/049817 International Application No.: PCT/JP2018/032555
Publication Date: 14.03.2019 International Filing Date: 03.09.2018
IPC:
G01N 21/64 (2006.01) ,G01N 21/41 (2006.01) ,G01N 33/543 (2006.01)
G PHYSICS
01
MEASURING; TESTING
N
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21
Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible, or ultra-violet light
62
Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
63
optically excited
64
Fluorescence; Phosphorescence
G PHYSICS
01
MEASURING; TESTING
N
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21
Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible, or ultra-violet light
17
Systems in which incident light is modified in accordance with the properties of the material investigated
41
Refractivity; Phase-affecting properties, e.g. optical path length
G PHYSICS
01
MEASURING; TESTING
N
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
33
Investigating or analysing materials by specific methods not covered by groups G01N1/-G01N31/131
48
Biological material, e.g. blood, urine; Haemocytometers
50
Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing
53
Immunoassay; Biospecific binding assay; Materials therefor
543
with an insoluble carrier for immobilising immunochemicals
Applicants:
国立研究開発法人産業技術総合研究所 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY [JP/JP]; 東京都千代田区霞が関1丁目3番1号 3-1, Kasumigaseki 1-chome, Chiyoda-ku, Tokyo 1008921, JP
Inventors:
芦葉 裕樹 ASHIBA Hiroki; JP
藤巻 真 FUJIMAKI Makoto; JP
Agent:
塩田 伸 SHIODA Shin; JP
Priority Data:
2017-17329408.09.2017JP
Title (EN) SENSOR CHIP, TARGET SUBSTANCE DETECTION DEVICE, AND TARGET SUBSTANCE DETECTION METHOD
(FR) PUCE DE CAPTEUR, DISPOSITIF DE DÉTECTION DE SUBSTANCE CIBLE ET PROCÉDÉ DE DÉTECTION DE SUBSTANCE CIBLE
(JA) センサチップ、目的物質検出装置及び目的物質検出方法
Abstract:
(EN) [Problem] The present invention addresses the problem of providing a sensor chip and the like which achieves both heat resistance/chemical resistance and inexpensive manufacturability, and is capable of exciting a waveguide mode. [Solution] A sensor chip 1 characterized by comprising: a light-transmitting substrate 2 which is formed from a glass material having a softening point of at least 600 °C; a detection plate 5, on which a waveguide mode excitation layer is disposed, the waveguide mode excitation layer being constituted by stacking, on the light-transmitting substrate 2, a first layer 3 formed from any one of a metal material, a semiconductor material, and a first dielectric material and a second layer 4 formed from a second dielectric material, in that order, and which is configured so as to be capable of forming an enhanced electric field on the waveguide mode excitation layer when light is irradiated from the light-transmitting substrate 2 side under the condition of total reflection; and an optical prism 6, which is disposed in optically close contact with the surface on the light-transmitting substrate 2 side of the detection plate 5, is formed from a thermoplastic plastic material, and has a refractive index differing from that of the light-transmitting substrate 2.
(FR) Le problème décrit par la présente invention est de fournir une puce de capteur, et similaire, permettant d'obtenir à la fois une résistance à la chaleur et une résistance chimique et dont l'aptitude à la fabrication est peu coûteuse et pouvant exciter un mode de guide d'ondes. La solution selon l'invention porte sur une puce de capteur (1) caractérisée en ce qu'elle comprend : un substrat de transmission de lumière (2) qui est formé à partir d'un matériau de verre ayant un point de ramollissement d'au moins 600 °C ; une plaque de détection (5), sur laquelle se trouve une couche d'excitation de mode de guide d'ondes, la couche d'excitation de mode de guide d'ondes étant constituée par empilement, sur le substrat de transmission de lumière (2), d'une première couche (3) formée à partir de l'un quelconque parmi un matériau métallique et un matériau semi-conducteur et d'un premier matériau diélectrique et d'une seconde couche (4) formée à partir d'un second matériau diélectrique, dans cet ordre, et ladite plaque de détection est conçue de façon à pouvoir former un champ électrique amélioré sur la couche d'excitation de mode de guide d'ondes lorsque la lumière est projetée depuis le côté substrat de transmission de lumière (2) sous l'effet de la réflexion totale ; et un prisme optique (6), disposé en contact optique étroit avec la surface côté substrat de transmission de lumière (2) de la plaque de détection (5), est formé à partir d'un matériau plastique thermoplastique et possède un indice de réfraction différent de celui du substrat de transmission de lumière (2).
(JA) 【課題】本発明は、耐熱性及び耐薬品性と、安価な製造性とを両立させ、かつ、導波モードを励起可能なセンサチップ等を提供することを課題とする。 【解決手段】センサチップ1は、軟化点が600℃以上のガラス材料で形成される光透過性基板2と、光透過性基板2上に金属材料、半導体材料及び第1の誘電体材料のいずれかで形成される第1の層3と第2の誘電体材料で形成される第2の層4とがこの順で積層されて構成される導波モード励起層とが配され、光透過性基板2側から全反射条件で光が照射されたときに前記導波モード励起層上に増強電場が形成可能とされる検出板5と、検出板5の光透過性基板2側の面に対し光学的に密着させて配され、熱可塑性プラスチック材料で形成されるとともに屈折率が光透過性基板2と異なる光学プリズム6と、を有することを特徴とする。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)