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1. (WO2019049692) CRYSTALIZED MONITOR METHOD, LASER ANNEALING APPARATUS, AND LASER ANNEALING METHOD
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Pub. No.: WO/2019/049692 International Application No.: PCT/JP2018/031373
Publication Date: 14.03.2019 International Filing Date: 24.08.2018
IPC:
H01L 21/268 (2006.01) ,H01L 21/20 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26
Bombardment with wave or particle radiation
263
with high-energy radiation
268
using electromagnetic radiation, e.g. laser radiation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
Applicants:
株式会社ブイ・テクノロジー V TECHNOLOGY CO., LTD. [JP/JP]; 神奈川県横浜市保土ヶ谷区神戸町134番地 134 Godo-cho, Hodogaya-ku, Yokohama-shi Kanagawa 2400005, JP
Inventors:
水村 通伸 MIZUMURA, Michinobu; JP
畑中 誠 HATANAKA, Makoto; JP
滝本 政美 TAKIMOTO, Masami; JP
齋藤 香織 SAITO, Kaori; JP
Agent:
特許業務法人日誠国際特許事務所 NISSAY INTERNATIONAL PATENT OFFICE; 東京都港区虎ノ門四丁目3番1号城山トラストタワー33階 Shiroyama Trust Tower 33th Floor, 3-1, Toranomon 4-chome, Minato-ku, Tokyo 1056033, JP
Priority Data:
2017-17113806.09.2017JP
Title (EN) CRYSTALIZED MONITOR METHOD, LASER ANNEALING APPARATUS, AND LASER ANNEALING METHOD
(FR) PROCÉDÉ DE SURVEILLANCE PAR CRISTALLISATION, APPAREIL DE RECUIT AU LASER ET PROCÉDÉ DE RECUIT AU LASER
(JA) 結晶化モニタ方法、レーザアニール装置、およびレーザアニール方法
Abstract:
(EN) According to the present invention, a film thickness calculation value of each film constituting a laminated structure in a non-treatment area which is adjacent to a treatment area to be annealed, and is not irradiated with a laser beam, is calculated; a crystallization level of the treatment area is calculated by fitting a second spectral spectrum measurement value of the treatment area and a second spectral spectrum calculation value calculated from the film thickness calculation value; and laser energy of the laser beam which a TFT substrate that is to be subjected to the next laser annealing treatment is irradiated with is adjusted.
(FR) Selon la présente invention, une valeur de calcul d'épaisseur de film de chaque film constituant une structure stratifiée dans une zone de non-traitement qui est adjacente à une zone de traitement à recuire, et n'est pas irradiée avec un faisceau laser, est calculée ; un niveau de cristallisation de la zone de traitement est calculé par ajustement d'une seconde valeur de mesure de spectre spectrale de la zone de traitement et d'une seconde valeur de calcul de spectre spectrale calculée à partir de la valeur de calcul d'épaisseur de film ; et l'énergie laser du faisceau laser dont un substrat TFT qui doit être soumis au traitement de recuit laser suivant est irradié avec est ajustée.
(JA) アニールを行う処理領域に近接するレーザ光が照射されない非処理領域の積層構造の各構成膜の膜厚計算値を算出し、処理領域の第2分光スペクトル測定値と、膜厚計算値から計算される第2分光スペクトル計算値と、のフィッティングにより、処理領域の結晶化レベルを算出して、次回にレーザアニール処理を行うTFT基板に対して照射するレーザ光のレーザエネルギーを調整する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)