Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2019049681) OPTICAL MODULATOR AND METHOD FOR MANUFACTURING SAME
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/049681 International Application No.: PCT/JP2018/031260
Publication Date: 14.03.2019 International Filing Date: 24.08.2018
IPC:
G02F 1/015 (2006.01) ,G02F 1/025 (2006.01)
G PHYSICS
02
OPTICS
F
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1
Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01
for the control of the intensity, phase, polarisation or colour
015
based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
G PHYSICS
02
OPTICS
F
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1
Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01
for the control of the intensity, phase, polarisation or colour
015
based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
025
in an optical waveguide structure
Applicants:
技術研究組合光電子融合基盤技術研究所 PHOTONICS ELECTRONICS TECHNOLOGY RESEARCH ASSOCIATION [JP/JP]; 東京都文京区関口1-20-10 1-20-10, Sekiguchi, Bunkyo-ku, Tokyo 1120014, JP
国立大学法人 東京大学 THE UNIVERSITY OF TOKYO [JP/JP]; 東京都文京区本郷七丁目3番1号 3-1, Hongo 7-chome, Bunkyo-ku, Tokyo 1138654, JP
Inventors:
藤方 潤一 FUJIKATA, Junichi; JP
高橋 重樹 TAKAHASHI, Shigeki; JP
竹中 充 TAKENAKA, Mitsuru; JP
Agent:
小野 新次郎 ONO, Shinjiro; JP
山本 修 YAMAMOTO, Osamu; JP
宮前 徹 MIYAMAE, Toru; JP
中西 基晴 NAKANISHI, Motoharu; JP
大房 直樹 OFUSA, Naoki; JP
Priority Data:
2017-17309008.09.2017JP
Title (EN) OPTICAL MODULATOR AND METHOD FOR MANUFACTURING SAME
(FR) MODULATEUR OPTIQUE ET SON PROCÉDÉ DE FABRICATION
(JA) 光変調器及びその製造方法
Abstract:
(EN) The present invention provides a small optical modulator capable of high-speed operation with low light loss and low required voltage. An optical phase modulator 100 is provided with a rib waveguide structure 110 including a PN junction 106 made of Si horizontally formed on a substrate and a Si1-xGex layer 108 having at least one layer, which is doped with a p-type impurity and is laminated on the PN junction 106 to electrically connect the Si1-xGex layer 108 and the PN junction 106. The rib waveguide structure 110 is substantially uniform in the direction light propagates. The position of a junction interface 106a in the PN junction 106 is offset from the center of the Si1-xGex layer 108 in a direction parallel to the substrate and perpendicular to the direction light propagates.
(FR) La présente invention concerne un petit modulateur optique apte à réaliser un fonctionnement à grande vitesse avec une faible perte de lumière et une faible tension requise. Un modulateur de phase optique (100) est pourvu d'une structure de guide d'onde de nervure (110) comprenant une jonction PN (106) en Si horizontalement formée sur un substrat et une couche de Si1-xGex (108) ayant au moins une couche, qui est dopée avec une impureté de type p et est stratifiée sur la jonction PN (106) pour connecter électriquement la couche de Si1-xGex (108) et la jonction PN (106). La structure de guide d'ondes de nervure (110) est sensiblement uniforme dans la direction de propagation de la lumière. La position d'une interface de jonction (106a) dans la jonction PN (106) est décalée par rapport au centre de la couche de Si1-xGex (108) dans une direction parallèle au substrat et perpendiculaire à direction de propagation de la lumière.
(JA) 光損失が小さく、サイズが小さく、所要電圧が低く、高速動作が可能な光変調器を提供する。 光位相変調器100は、基板上に横方向に形成されたSiからなるPN接合106と、p型に不純物ドーピングされ、PN接合106と電気的に接続されるように、PN接合106上に積層される少なくとも1層からなるSi1-xGex層108とを含むリブ型導波路構造110を備え、リブ型導波路構造110は、光の伝搬方向に沿って実質的に一様な構造を有し、基板と平行且つ光の伝搬方向と垂直な方向において、PN接合106の接合界面106aの位置がSi1-xGex層108の中心からオフセットしている。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)