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1. (WO2019049653) SUBSTRATE AND LIGHT-EMITTING ELEMENT
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/049653 International Application No.: PCT/JP2018/030857
Publication Date: 14.03.2019 International Filing Date: 21.08.2018
IPC:
C30B 29/20 (2006.01) ,C30B 33/02 (2006.01) ,H01L 21/318 (2006.01) ,H01L 21/86 (2006.01) ,H01L 33/16 (2010.01) ,H01L 33/32 (2010.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10
Inorganic compounds or compositions
16
Oxides
20
Aluminium oxides
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
33
After-treatment of single crystals or homogeneous polycrystalline material with defined structure
02
Heat treatment
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314
Inorganic layers
318
composed of nitrides
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
82
to produce devices, e.g. integrated circuits, each consisting of a plurality of components
84
the substrate being other than a semiconductor body, e.g. being an insulating body
86
the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
16
with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
26
Materials of the light emitting region
30
containing only elements of group III and group V of the periodic system
32
containing nitrogen
Applicants:
TDK株式会社 TDK CORPORATION [JP/JP]; 東京都中央区日本橋二丁目5番1号 2-5-1, Nihonbashi, Chuo-ku, Tokyo 1036128, JP
Inventors:
大井戸 敦 OHIDO Atsushi; JP
山沢 和人 YAMASAWA Kazuhito; JP
川崎 克己 KAWASAKI Katsumi; JP
Agent:
長谷川 芳樹 HASEGAWA Yoshiki; JP
黒木 義樹 KUROKI Yoshiki; JP
三上 敬史 MIKAMI Takafumi; JP
Priority Data:
2017-17404611.09.2017JP
Title (EN) SUBSTRATE AND LIGHT-EMITTING ELEMENT
(FR) SUBSTRAT ET ÉLÉMENT ÉLECTROLUMINESCENT
(JA) 基板及び発光素子
Abstract:
(EN) This substrate 10 comprises a first layer L1 containing crystalline aluminum nitride, a second layer L2 containing crystalline α-alumina, and an intermediate layer Lm interposed between the first layer L1 and the second layer L2 and containing aluminum, nitrogen, and oxygen, wherein the nitrogen content of the intermediate layer Lm decreases from the first layer L1 toward the second layer L2 in direction Z, and the oxygen content of the intermediate layer Lm increases from the first layer L1 toward the second layer L2 in direction Z.
(FR) Cette invention concerne un substrat (10), comprenant une première couche (L1) contenant du nitrure d'aluminium cristallin, une seconde couche (L2) contenant de l'alpha-alumine cristalline, et une couche intermédiaire (Lm) interposée entre la première couche (L1) et la seconde couche (L2) et contenant de l'aluminium, de l'azote et de l'oxygène, la teneur en azote de la couche intermédiaire (Lm) diminuant de la première couche (L1) vers la seconde couche (L2) dans la direction Z, et la teneur en oxygène de la couche intermédiaire (Lm) augmentant de la première couche (L1) vers la seconde couche (L2) dans la direction Z.
(JA) 基板10は、結晶質の窒化アルミニウムを含む第一層L1と、結晶質のα‐アルミナを含む第二層L2と、第一層L1と第二層L2とによって挟まれ、アルミニウム、窒素及び酸素を含む中間層Lmと、を備え、中間層Lmにおける窒素の含有量が、第一層L1から第二層L2に向かう方向Zに沿って減少し、中間層Lmにおける酸素の含有量が、第一層L1から第二層L2に向かう方向Zに沿って増加する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)