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1. (WO2019049610) POLISHING COMPOSITION AND SILICON-SUBSTRATE POLISHING METHOD
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Pub. No.: WO/2019/049610 International Application No.: PCT/JP2018/030185
Publication Date: 14.03.2019 International Filing Date: 13.08.2018
IPC:
H01L 21/304 (2006.01) ,B24B 37/00 (2012.01) ,C09K 3/14 (2006.01) ,H01L 21/308 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
B PERFORMING OPERATIONS; TRANSPORTING
24
GRINDING; POLISHING
B
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37
Lapping machines or devices; Accessories
C CHEMISTRY; METALLURGY
09
DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
K
MATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
3
Materials not provided for elsewhere
14
Anti-slip materials; Abrasives
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
308
using masks
Applicants:
株式会社フジミインコーポレーテッド FUJIMI INCORPORATED [JP/JP]; 愛知県清須市西枇杷島町地領二丁目1番地1 1-1, Chiryo 2-chome, Nishibiwajima-cho, Kiyosu-shi, Aichi 4528502, JP
Inventors:
土屋 公亮 TSUCHIYA, Kohsuke; JP
浅田 真希 ASADA, Maki; JP
Agent:
安部 誠 ABE, Makoto; JP
Priority Data:
2017-17255707.09.2017JP
Title (EN) POLISHING COMPOSITION AND SILICON-SUBSTRATE POLISHING METHOD
(FR) COMPOSITION DE POLISSAGE ET PROCÉDÉ DE POLISSAGE DE SUBSTRAT DE SILICIUM
(JA) 研磨用組成物およびシリコン基板研磨方法
Abstract:
(EN) Provided is a polishing composition with which it is possible to simultaneously realize low LPD and low surface roughness. The polishing composition provided by the present invention includes abrasive grains, a water-soluble polymer, a surfactant, and a basic compound. With the water-soluble polymer, a washing parameter α represented by expression α = θ1 −θ0 satisfies 1 < α < 35. Here, θ0 in the aforementioned expression is the water contact angle of a pre-SC-1-treatment wafer obtained by applying an aqueous solution of the water-soluble polymer to a surface of a monocrystalline silicon wafer and by subsequently washing the surface with water, and θ1 in the aforementioned expression is the water contact angle of a post-SC-1-treatment wafer obtained by subjecting the pre-SC-1-treatment wafer to a washing treatment A in which the pre-SC-1-treatment wafer is treated for 10 seconds with a room-temperature SC-1 washing liquid LA containing 29% aqueous ammonia, 31% hydrogen peroxide solution, and water at a volume ratio of 1:2:30.
(FR) L'invention concerne une composition de polissage avec laquelle il est possible de réaliser simultanément un faible dépôt en phase liquide et une faible rugosité de surface. La composition de polissage selon la présente invention contient des grains abrasifs, un polymère soluble dans l'eau, un surfactant et un composé basique. Avec le polymère soluble dans l'eau, un paramètre de lavage α représenté par l'expression α = θ1 −θ0 satisfait 1 < α < 35. Selon l'invention, θ0 dans l'expression susmentionnée est l'angle de contact avec l'eau d'une tranche de traitement pré-SC-1 obtenue par application d'une solution aqueuse du polymère soluble dans l'eau à une surface d'une tranche de silicium monocristallin et par lavage ultérieur de la surface avec de l'eau, et θ1 dans l'expression susmentionnée est l'angle de contact avec l'eau d'une tranche de traitement post-SC-1 obtenue en soumettant la tranche de traitement pré-SC-1 à un traitement de lavage A dans lequel la tranche de traitement pré-SC-1 est traitée pendant 10 secondes avec un liquide de lavage SC-1 à température ambiante LA contenant 29 % d'ammoniac aqueux, 31 % de solution de peroxyde d'hydrogène et de l'eau à un rapport volumique de 1: 2:30.
(JA) 低LPDおよび低表面粗さを同時に実現し得る研磨用組成物を提供する。本発明により提供される研磨用組成物は、砥粒、水溶性高分子、界面活性剤、および塩基性化合物を含む。上記水溶性高分子は、以下の式:α=θ1-θ0;により表される洗浄性パラメータαが、1<α<35を満たす。ここで、上記式中のθ0は、単結晶シリコンウェーハの表面に上記水溶性高分子の水溶液を塗布した後に水洗して得られるSC-1処理前ウェーハの水接触角であり、上記式中のθ1は、上記SC-1処理前ウェーハに29%アンモニア水と31%過酸化水素水と水とを1:2:30の体積比で含む室温のSC-1洗浄液Lで10秒間処理する洗浄処理Aを施して得られるSC-1処理後ウェーハの水接触角である。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)