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1. (WO2019049591) SPIN CURRENT MAGNETIZATION REVERSAL ELEMENT AND SPIN ORBIT TORQUE TYPE MAGNETIC RESISTANCE EFFECT ELEMENT
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Pub. No.: WO/2019/049591 International Application No.: PCT/JP2018/029754
Publication Date: 14.03.2019 International Filing Date: 08.08.2018
IPC:
H01L 29/82 (2006.01) ,H01L 21/8239 (2006.01) ,H01L 27/105 (2006.01) ,H01L 43/08 (2006.01) ,H01L 43/12 (2006.01) ,H03B 15/00 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
82
controllable by variation of the magnetic field applied to the device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
82
to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822
the substrate being a semiconductor, using silicon technology
8232
Field-effect technology
8234
MIS technology
8239
Memory structures
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
10
including a plurality of individual components in a repetitive configuration
105
including field-effect components
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08
Magnetic-field-controlled resistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
12
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
B
GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
15
Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using super-conductivity effects
Applicants:
TDK株式会社 TDK CORPORATION [JP/JP]; 東京都中央区日本橋二丁目5番1号 2-5-1, Nihonbashi, Chuo-ku, Tokyo 1036128, JP
Inventors:
佐々木 智生 SASAKI Tomoyuki; JP
塩川 陽平 SHIOKAWA Yohei; JP
Agent:
棚井 澄雄 TANAI Sumio; JP
荒 則彦 ARA Norihiko; JP
飯田 雅人 IIDA Masato; JP
荻野 彰広 OGINO Akihiro; JP
Priority Data:
2017-17239907.09.2017JP
Title (EN) SPIN CURRENT MAGNETIZATION REVERSAL ELEMENT AND SPIN ORBIT TORQUE TYPE MAGNETIC RESISTANCE EFFECT ELEMENT
(FR) ÉLÉMENT D'INVERSION DE MAGNÉTISATION DE COURANT DE SPIN ET ÉLÉMENT À EFFET DE RÉSISTANCE MAGNÉTIQUE DE TYPE COUPLAGE SPIN-ORBITE
(JA) スピン流磁化反転素子及びスピン軌道トルク型磁気抵抗効果素子
Abstract:
(EN) This spin current magnetization reversal element (10) comprises a spin orbit torque wiring (2) extending in a first direction (X), and a first ferromagnetic layer (1) disposed in a second direction (Z) intersecting with the first direction of the spin orbit torque wiring. The spin orbit torque wiring has a first surface (2a) located to the side whereon the first ferromagnetic layer is disposed, and a second surface (2b) to the side facing away from the first surface. On the first surface and outside of a first region (2A) wherein the first ferromagnetic layer is disposed, the spin orbit torque wiring has second regions (2B), which are recessed toward the second surface with respect to the first region.
(FR) Cet élément d'inversion de magnétisation de courant de spin (10) comprend un câblage de couplage spin-orbite (2) s'étendant dans une première direction (X), et une première couche ferromagnétique (1) disposée dans une seconde direction (Z) croisant la première direction du câblage de couplage spin-orbite. Le câblage de couplage spin-orbite a une première surface (2a) située du côté sur lequel est disposée la première couche ferromagnétique, et une seconde surface (2b) du côté opposé à la première surface. Sur la première surface et à l'extérieur d'une première région (2A) dans laquelle est disposée la première couche ferromagnétique, le câblage de couplage spin-orbite comporte des secondes régions (2B), qui sont en retrait vers la seconde surface par rapport à la première région.
(JA) このスピン流磁化反転素子(10)は、第1方向(X)に延在するスピン軌道トルク配線(2)と、前記スピン軌道トルク配線の前記第1方向と交差する第2方向(Z)に配置された第1強磁性層(1)と、を備え、前記スピン軌道トルク配線は、前記第1強磁性層が配置された側に位置する第1面(2a)、及び前記第1面と反対側の第2面(2b)とを有し、前記スピン軌道トルク配線は、前記第1面において、前記第1強磁性層が配置された第1領域(2A)の外に、前記第1領域より前記第2面側に凹む第2領域(2B)を有する。
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African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)