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1. (WO2019049469) SUSCEPTOR, CVD DEVICE, AND METHOD FOR MANUFACTURING EPITAXIAL WAFER
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Pub. No.: WO/2019/049469 International Application No.: PCT/JP2018/023891
Publication Date: 14.03.2019 International Filing Date: 22.06.2018
IPC:
H01L 21/205 (2006.01) ,C23C 16/42 (2006.01) ,C23C 16/44 (2006.01) ,H01L 21/683 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205
using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22
characterised by the deposition of inorganic material, other than metallic material
30
Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
42
Silicides
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683
for supporting or gripping
Applicants:
昭和電工株式会社 SHOWA DENKO K.K. [JP/JP]; 東京都港区芝大門一丁目13番9号 13-9, Shibadaimon 1-chome, Minato-ku, Tokyo 1058518, JP
Inventors:
梅田 喜一 UMETA Yoshikazu; JP
深田 啓介 FUKADA Keisuke; JP
石橋 直人 ISHIBASHI Naoto; JP
渥美 広範 ATSUMI Hironori; JP
Agent:
及川 周 OIKAWA Shu; JP
荒 則彦 ARA Norihiko; JP
勝俣 智夫 KATSUMATA Tomoo; JP
Priority Data:
2017-17201207.09.2017JP
Title (EN) SUSCEPTOR, CVD DEVICE, AND METHOD FOR MANUFACTURING EPITAXIAL WAFER
(FR) SUSCEPTEUR, DISPOSITIF DE DÉPÔT CHIMIQUE EN PHASE VAPEUR (CVD) ET PROCÉDÉ DE FABRICATION DE TRANCHE ÉPITAXIALE
(JA) サセプタ、CVD装置及びエピタキシャルウェハの製造方法
Abstract:
(EN) This susceptor (1) holds a wafer in a CVD device that forms a film on a wafer by chemical vapor deposition, and comprises an outer susceptor (2) and an inner susceptor (1). The outer susceptor (2) has an opening (2c) for fitting and accommodating the inner susceptor (1), and a wafer placement surface (2a) on which an outer peripheral section (Ws) of a wafer is placed. The inner susceptor (1) has a protruding section (1a) on a surface (1b) opposite a wafer (W), and the protruding section (1a) has a height (h) that is not tall enough to come into contact with the wafer (W) when the wafer (W) is placed on the susceptor.
(FR) L'invention concerne un suscepteur (1) maintenant une tranche dans un dispositif CVD qui forme un film sur une tranche par dépôt chimique en phase vapeur, et comprend un suscepteur externe (2) et un suscepteur interne (1). Le suscepteur externe (2) a une ouverture (2c) pour ajuster et recevoir le suscepteur interne (1), et une surface de placement de tranche (2a) sur laquelle une section périphérique externe (Ws) d'une tranche est placée. Le suscepteur interne (1) a une section en saillie (1a) sur une surface (1b) opposée à une tranche (W), et la section en saillie (1a) a une hauteur (h) qui n'est pas suffisamment élevée pour entrer en contact avec la tranche (W) lorsque la tranche (W) est placée sur le suscepteur.
(JA) 本発明のサセプタ(1)は、化学的気相成長によってウェハ上に膜を形成するCVD装置においてウェハを保持するサセプタであって、外側サセプタ(2)と内側サセプタ(1)を含み、外側サセプタ(2)は内側サセプタ(1)を嵌合させて収納する開口部(2c)と、ウェハの外周部(Ws)が載置されるウェハ載置面(2a)を有し、内側サセプタ(1)は、ウェハ(W)と対向する面(1b)に突起部(1a)を有し、突起部(1a)の高さ(h)が、サセプタにウェハ(W)を載置したときにウェハ(W)に接しない高さである。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)