Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2019049251) SEMICONDUCTOR DEVICE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/049251 International Application No.: PCT/JP2017/032213
Publication Date: 14.03.2019 International Filing Date: 07.09.2017
IPC:
H01L 29/739 (2006.01) ,H01L 29/78 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
70
Bipolar devices
72
Transistor-type devices, i.e. able to continuously respond to applied control signals
739
controlled by field effect
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
Applicants:
三菱電機株式会社 MITSUBISHI ELECTRIC CORPORATION [JP/JP]; 東京都千代田区丸の内二丁目7番3号 7-3, Marunouchi 2-chome, Chiyoda-ku, Tokyo 1008310, JP
Inventors:
大佐賀 毅 OSAGA Tsuyoshi; JP
阿多 保夫 ATA Yasuo; JP
Agent:
吉竹 英俊 YOSHITAKE Hidetoshi; JP
有田 貴弘 ARITA Takahiro; JP
Priority Data:
Title (EN) SEMICONDUCTOR DEVICE
(FR) DISPOSITIF SEMICONDUCTEUR
(JA) 半導体装置
Abstract:
(EN) A semiconductor device (10) is provided with: a P-type well layer (2), an N-type emitter layer (3), gate insulating films (4), and gate electrodes (5a, 5b) on the upper surface side of an N--type drift layer (1); and an N-type buffer layer (6), a P-type collector layer (7), and N++-type layers (8) on the lower surface side of the N--type drift layer (1). The N++-type layer (8) is partially formed inside the N-type buffer layer (6). The N++-type layer (8) has an impurity concentration that is higher than the impurity concentration of the N-type buffer layer (6) and that is equal to or higher than the impurity concentration of the P-type collector layer (7).
(FR) La présente invention concerne un dispositif à semi-conducteur (10) comprenant : une couche de puits du type P (2), une couche émettrice du type N (3), des films isolants de grille (4), et des électrodes grille (5a, 5b) du côté surface supérieure d'une couche de dérive du type N- (1) ; et une couche tampon du type N (6), une couche de collecteur du type P (7), et des couches du type N++ (8) du côté surface inférieure de la couche de dérive du type N- (1). La couche du type N++ (8) est partiellement formée dans la couche tampon du type N (6). La couche du type N++ (8) présente une concentration en impuretés supérieure à la concentration en impuretés de la couche tampon du type N et supérieure ou égale à la concentration en impuretés de la couche de collecteur du type P (7).
(JA) 半導体装置(10)は、N型ドリフト層(1)の上面側に、P型ウェル層(2)、N型エミッタ層(3)、ゲート絶縁膜(4)およびゲート電極(5a,5b)を備え、N型ドリフト層(1)の下面側に、N型バッファ層(6)と、P型コレクタ層(7)と、N++型層(8)とを備える。N++型層(8)は、N型バッファ層(6)内に部分的に形成されている。N++型層(8)は、不純物濃度がN型バッファ層(6)の不純物濃度よりも高く、且つ、P型コレクタ層(7)の不純物濃度以上の不純物濃度を有している。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)