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1. WO2019049035 - MICROELECTRONIC SENSOR FOR BIOMETRIC AUTHENTICATION

Publication Number WO/2019/049035
Publication Date 14.03.2019
International Application No. PCT/IB2018/056765
International Filing Date 05.09.2018
IPC
H03F 3/193 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
3Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
189High-frequency amplifiers, e.g. radio frequency amplifiers
19with semiconductor devices only
193with field-effect devices
H01L 29/423 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40Electrodes
41characterised by their shape, relative sizes or dispositions
423not carrying the current to be rectified, amplified or switched
A61B 5/05 2006.01
AHUMAN NECESSITIES
61MEDICAL OR VETERINARY SCIENCE; HYGIENE
BDIAGNOSIS; SURGERY; IDENTIFICATION
5Measuring for diagnostic purposes; Identification of persons
05Measuring for diagnosis by means of electric currents or magnetic fields
A61B 5/145 2006.01
AHUMAN NECESSITIES
61MEDICAL OR VETERINARY SCIENCE; HYGIENE
BDIAGNOSIS; SURGERY; IDENTIFICATION
5Measuring for diagnostic purposes; Identification of persons
145Measuring characteristics of blood in vivo, e.g. gas concentration, pH-value
H01L 31/112 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101Devices sensitive to infra-red, visible or ultra-violet radiation
112characterised by field-effect operation, e.g. junction field-effect photo- transistor
A61B 5/00 2006.01
AHUMAN NECESSITIES
61MEDICAL OR VETERINARY SCIENCE; HYGIENE
BDIAGNOSIS; SURGERY; IDENTIFICATION
5Measuring for diagnostic purposes; Identification of persons
CPC
A61B 2562/0228
AHUMAN NECESSITIES
61MEDICAL OR VETERINARY SCIENCE; HYGIENE
BDIAGNOSIS; SURGERY; IDENTIFICATION
2562Details of sensors; Constructional details of sensor housings or probes; Accessories for sensors
02Details of sensors specially adapted for in-vivo measurements
0228Microwave sensors
A61B 2562/028
AHUMAN NECESSITIES
61MEDICAL OR VETERINARY SCIENCE; HYGIENE
BDIAGNOSIS; SURGERY; IDENTIFICATION
2562Details of sensors; Constructional details of sensor housings or probes; Accessories for sensors
02Details of sensors specially adapted for in-vivo measurements
028Microscale sensors, e.g. electromechanical sensors [MEMS]
A61B 2562/043
AHUMAN NECESSITIES
61MEDICAL OR VETERINARY SCIENCE; HYGIENE
BDIAGNOSIS; SURGERY; IDENTIFICATION
2562Details of sensors; Constructional details of sensor housings or probes; Accessories for sensors
04Arrangements of multiple sensors of the same type
043in a linear array
A61B 2562/12
AHUMAN NECESSITIES
61MEDICAL OR VETERINARY SCIENCE; HYGIENE
BDIAGNOSIS; SURGERY; IDENTIFICATION
2562Details of sensors; Constructional details of sensor housings or probes; Accessories for sensors
12Manufacturing methods specially adapted for producing sensors for in-vivo measurements
A61B 5/0022
AHUMAN NECESSITIES
61MEDICAL OR VETERINARY SCIENCE; HYGIENE
BDIAGNOSIS; SURGERY; IDENTIFICATION
5Detecting, measuring or recording for diagnostic purposes
0002Remote monitoring of patients using telemetry, e.g. transmission of vital signals via a communication network
0015characterised by features of the telemetry system
0022Monitoring a patient using a global network, e.g. telephone networks, internet
A61B 5/0507
AHUMAN NECESSITIES
61MEDICAL OR VETERINARY SCIENCE; HYGIENE
BDIAGNOSIS; SURGERY; IDENTIFICATION
5Detecting, measuring or recording for diagnostic purposes
05Detecting, measuring or recording for diagnosis by means of electric currents or magnetic fields; ; Measuring using microwaves or radiowaves
0507using microwaves or terahertz waves
Applicants
  • EPITRONIC HOLDINGS PTE. LTD. [SG]/[SG]
Inventors
  • RAM, Ayal
  • MUNIEF, Walid-Madhat
Priority Data
62/554,09805.09.2017US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) MICROELECTRONIC SENSOR FOR BIOMETRIC AUTHENTICATION
(FR) CAPTEUR MICROÉLECTRONIQUE POUR AUTHENTIFICATION BIOMÉTRIQUE
Abstract
(EN)
A microelectronic sensor for biometric authentication of a user is based on the combination of an open-gate pseudo-conductive high-electron mobility transistor and a Vivaldi antenna installed in the open gate area of the transistor. The sensor is capable of sensing sub-THz radiation produced by a body of a user, and comprises a heterojunction structure made of the layers of GaN/AlGaN single- or poly-crystalline semiconductor materials stacked alternately and a conducting channel comprising a two-dimensional electron gas (2DEG) or a two-dimensional hole gas (2DHG) formed at the interface between the GaN/AlGaN layers. The highest sensitivity of the sensor is achieved when the thickness of the top recessed layer (GaN or AlGaN) in the open gate area between the source and drain contacts is 5-9 nm and the surface roughness of this top layer is about 0.2 nm or less.
(FR)
L'invention concerne un capteur microélectronique destiné à une authentification biométrique d'un utilisateur et basé sur la combinaison d'un transistor pseudo-conducteur à mobilité électronique élevée, à grille ouverte, et d'une antenne Vivaldi installée dans la zone de grille ouverte du transistor. Le capteur est capable de détecter un rayonnement sub-térahertzien (sub-THZ) produit par le corps d'un utilisateur, et comprend une structure à hétérojonction constituée des couches de matériaux semi-conducteurs monocristallins ou polycristallins GaN/AlGaN, empilées en alternance, et un canal conducteur comprenant un gaz électronique bidimensionnel (2 DEG) ou un gaz de trou bidimensionnel (2 DHG) formé au niveau de l'interface entre les couches de GaN/AlGaN. La sensibilité la plus élevée du capteur est obtenue lorsque l'épaisseur de la couche évidée supérieure (GaN ou AlGaN), dans la zone de grille ouverte entre les contacts de source et de drain, est de 5 à 9 nm et la rugosité de surface de cette couche supérieure est d'environ 0,2 nm ou moins.
Also published as
Latest bibliographic data on file with the International Bureau