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1. (WO2019049034) MICROELECTRONIC SENSOR FOR NON-INVASIVE MONITORING OF BLOOD GLUCOSE LEVELS
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Pub. No.: WO/2019/049034 International Application No.: PCT/IB2018/056762
Publication Date: 14.03.2019 International Filing Date: 05.09.2018
IPC:
H03F 3/193 (2006.01) ,H01L 29/423 (2006.01) ,A61B 5/05 (2006.01) ,A61B 5/145 (2006.01) ,H01L 31/112 (2006.01)
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
F
AMPLIFIERS
3
Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
189
High-frequency amplifiers, e.g. radio frequency amplifiers
19
with semiconductor devices only
193
with field-effect devices
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40
Electrodes
41
characterised by their shape, relative sizes or dispositions
423
not carrying the current to be rectified, amplified or switched
A HUMAN NECESSITIES
61
MEDICAL OR VETERINARY SCIENCE; HYGIENE
B
DIAGNOSIS; SURGERY; IDENTIFICATION
5
Measuring for diagnostic purposes; Identification of persons
05
Measuring for diagnosis by means of electric currents or magnetic fields
A HUMAN NECESSITIES
61
MEDICAL OR VETERINARY SCIENCE; HYGIENE
B
DIAGNOSIS; SURGERY; IDENTIFICATION
5
Measuring for diagnostic purposes; Identification of persons
145
Measuring characteristics of blood in vivo, e.g. gas concentration, pH-value
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
10
characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101
Devices sensitive to infra-red, visible or ultra-violet radiation
112
characterised by field-effect operation, e.g. junction field-effect photo- transistor
Applicants:
EPITRONIC HOLDINGS PTE. LTD. [SG/SG]; 100 Tras St., #16-01 100 AM Singapore 079027, SG
Inventors:
RAM, Ayal; SG
LICHTENSTEIN, Amir; SG
Priority Data:
62/554,10305.09.2017US
Title (EN) MICROELECTRONIC SENSOR FOR NON-INVASIVE MONITORING OF BLOOD GLUCOSE LEVELS
(FR) CAPTEUR MICROÉLECTRONIQUE POUR LA SURVEILLANCE NON INVASIVE DE TAUX DE GLUCOSE DANS LE SANG
Abstract:
(EN) A microelectronic sensor for non-invasive monitoring of glucose levels in blood is based on the combination of an open-gate pseudo-conductive high-electron mobility transistor and a Vivaldi antenna installed in the open gate area of the transistor. The sensor is capable of sensing sub-THz radiation produced by a body of a user, and comprises a heterojunction structure made of the layers of GaN/AlGaN single- or poly-crystalline semiconductor materials stacked alternately and a conducting channel comprising a two-dimensional electron gas (2DEG) or a two-dimensional hole gas (2DHG) formed at the interface between the GaN/AlGaN layers. The highest sensitivity of the sensor is achieved when the thickness of the top recessed layer (GaN or AlGaN) in the open gate area between the source and drain contacts is 5-9 nm and the surface roughness of this top layer is about 0.2 nm or less.
(FR) Un capteur microélectronique pour la surveillance non invasive de taux de glucose dans le sang est basé sur la combinaison d'un transistor à haute mobilité d'électrons pseudo-conducteur à grille ouverte et d'une antenne Vivaldi installée dans la zone de grille ouverte du transistor. Le capteur peut détecter un rayonnement sub-térahertz (sub-THz) produit par le corps d'un utilisateur, et comprend une structure d'hétérojonction constituée des couches de matériaux semi-conducteurs mono ou polycristallins GaN/AlGaN empilées alternativement et un canal conducteur comprenant un gaz d'électrons bidimensionnel (GE2D) ou un gaz de trous bidimensionnel (HG2D) formé au niveau de l'interface entre les couches de GaN/AlGaN. La sensibilité la plus élevée du capteur est obtenue lorsque l'épaisseur de la couche évidée supérieure (GaN ou AlGaN) dans la zone de grille ouverte entre les contacts de source et de drain est de 5 à 9 nm et que la rugosité de surface de cette couche supérieure est d'environ 0,2 nm ou moins.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)