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1. (WO2019048979) ELECTRONIC EQUIPMENT
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Pub. No.: WO/2019/048979 International Application No.: PCT/IB2018/056473
Publication Date: 14.03.2019 International Filing Date: 27.08.2018
IPC:
G06G 7/60 (2006.01) ,G05F 3/26 (2006.01) ,G06N 3/063 (2006.01) ,G11C 11/405 (2006.01) ,H01L 21/8242 (2006.01) ,H01L 27/108 (2006.01) ,H01L 29/786 (2006.01)
G PHYSICS
06
COMPUTING; CALCULATING; COUNTING
G
ANALOGUE COMPUTERS
7
Devices in which the computing operation is performed by varying electric or magnetic quantities
48
Analogue computers for specific processes, systems, or devices, e.g. simulators
60
for living beings, e.g. their nervous systems
G PHYSICS
05
CONTROLLING; REGULATING
F
SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
3
Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
02
Regulating voltage or current
08
wherein the variable is dc
10
using uncontrolled devices with non-linear characteristics
16
being semiconductor devices
20
using diode-transistor combinations
26
Current mirrors
G PHYSICS
06
COMPUTING; CALCULATING; COUNTING
N
COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS
3
Computer systems based on biological models
02
using neural network models
06
Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
063
using electronic means
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21
using electric elements
34
using semiconductor devices
40
using transistors
401
forming cells needing refreshing or charge regeneration, i.e. dynamic cells
403
with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
405
with three charge-transfer gates, e.g. MOS transistors, per cell
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
82
to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822
the substrate being a semiconductor, using silicon technology
8232
Field-effect technology
8234
MIS technology
8239
Memory structures
8242
Dynamic random access memory structures (DRAM)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
10
including a plurality of individual components in a repetitive configuration
105
including field-effect components
108
Dynamic random access memory structures
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
Applicants:
株式会社半導体エネルギー研究所 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. [JP/JP]; 神奈川県厚木市長谷398 398, Hase, Atsugi-shi, Kanagawa 2430036, JP
Inventors:
原田伸太郎 HARADA, Shintaro; JP
井上達則 INOUE, Tatsunori; JP
黒川義元 KUROKAWA, Yoshiyuki; JP
山崎舜平 YAMAZAKI, Shunpei; JP
Priority Data:
2017-17082506.09.2017JP
Title (EN) ELECTRONIC EQUIPMENT
(FR) ÉQUIPEMENT ÉLECTRONIQUE
(JA) 電子機器
Abstract:
(EN) Provided is electronic equipment having a semiconductor device capable of intermittent operation. The electronic equipment has a semiconductor device, and the semiconductor device has a current mirror circuit, a bias circuit and first through third transistors. The current mirror circuit has a first output terminal and a second output terminal, and is electrically connected to a power source supply line via the first transistor. The current mirror circuit has a function whereby currents corresponding to the potential of the first output terminal are respectively output from the first output terminal and the second output terminal. The bias circuit has a current source circuit and a current sink circuit. The current source circuit is electrically connected to the second output terminal via the second transistor, and the current sink circuit is electrically connected to the second output terminal via the third transistor. The intermittent operation of the semiconductor device is achieved by switching the on/off states of the first through third transistors.
(FR) L'invention concerne un équipement électronique comportant un dispositif à semi-conducteur capable de fonctionner par intermittence. L'équipement électronique comprend un dispositif à semi-conducteur, et le dispositif à semi-conducteur comporte un circuit miroir de courant, un circuit de polarisation et des premier à troisième transistors. Le circuit miroir de courant comporte une première borne de sortie et une deuxième borne de sortie, et est connecté électriquement à une ligne d'alimentation de source d'énergie par l'intermédiaire du premier transistor. Le circuit miroir de courant a une fonction selon laquelle des courants correspondant au potentiel de la première borne de sortie sont respectivement fournis par la première borne de sortie et la deuxième borne de sortie. Le circuit de polarisation comporte un circuit source de courant et un circuit collecteur de courant. Le circuit source de courant est connecté électriquement à la deuxième borne de sortie par l'intermédiaire du deuxième transistor, et le circuit collecteur de courant est connecté électriquement à la deuxième borne de sortie par l'intermédiaire du troisième transistor. Le fonctionnement intermittent du dispositif à semi-conducteur est obtenu par commutation des états passant/bloquant des premier à troisième transistors.
(JA) 要約書 間欠駆動が可能な半導体装置を有する電子機器を提供する。 電子機器は半導体装置を有し、 半導体装置はカレントミラー回路と、 バイアス回路と、 第1乃至第3 トランジスタと、を有する。カレントミラー回路は、第1出力端子と、第2出力端子と、を有し、カ レントミラー回路は、 第1トランジスタを介して、 電源供給線と電気的に接続されている。 また、 カ レントミラー回路は、 第1出力端子の電位に応じた電流を、 第1出力端子及び第2出力端子からそれ ぞれ出力する機能を有する。バイアス回路は、電流ソース回路と、電流シンク回路と、を有し、電流 ソース回路は、第2トランジスタを介して、第2出力端子と電気的に接続され、電流シンク回路は、 第3トランジスタを介して、 第2出力端子と電気的に接続されている。 第1乃至第3トランジスタの オン状態、オフ状態の切り替えによって、半導体装置で間欠駆動を実現する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)