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1. (WO2019048967) SEMICONDUCTOR DEVICE, STORAGE DEVICE, AND ELECTRONIC EQUIPMENT
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Pub. No.: WO/2019/048967 International Application No.: PCT/IB2018/056412
Publication Date: 14.03.2019 International Filing Date: 24.08.2018
IPC:
H01L 21/8242 (2006.01) ,G11C 5/02 (2006.01) ,G11C 11/4097 (2006.01) ,H01L 21/336 (2006.01) ,H01L 27/108 (2006.01) ,H01L 27/1156 (2017.01) ,H01L 29/786 (2006.01) ,H01L 29/788 (2006.01) ,H01L 29/792 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
82
to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822
the substrate being a semiconductor, using silicon technology
8232
Field-effect technology
8234
MIS technology
8239
Memory structures
8242
Dynamic random access memory structures (DRAM)
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
5
Details of stores covered by group G11C11/63
02
Disposition of storage elements, e.g. in the form of a matrix array
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21
using electric elements
34
using semiconductor devices
40
using transistors
401
forming cells needing refreshing or charge regeneration, i.e. dynamic cells
4063
Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
407
for memory cells of the field-effect type
409
Read-write (R-W) circuits
4097
Bit-line organisation, e.g. bit-line layout, folded bit lines
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334
Multistep processes for the manufacture of devices of the unipolar type
335
Field-effect transistors
336
with an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
10
including a plurality of individual components in a repetitive configuration
105
including field-effect components
108
Dynamic random access memory structures
[IPC code unknown for H01L 27/1156]
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
788
with floating gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
792
with charge trapping gate insulator, e.g. MNOS-memory transistor
Applicants:
株式会社半導体エネルギー研究所 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. [JP/JP]; 神奈川県厚木市長谷398 398, Hase, Atsugi-shi, Kanagawa 2430036, JP
Inventors:
大貫達也 ONUKI, Tatsuya; JP
松嵜隆徳 MATSUZAKI, Takanori; JP
加藤清 KATO, Kiyoshi; JP
山崎舜平 YAMAZAKI, Shunpei; JP
Priority Data:
2017-17081406.09.2017JP
2018-03461028.02.2018JP
Title (EN) SEMICONDUCTOR DEVICE, STORAGE DEVICE, AND ELECTRONIC EQUIPMENT
(FR) DISPOSITIF À SEMI-CONDUCTEUR, DISPOSITIF DE STOCKAGE ET ÉQUIPEMENT ÉLECTRONIQUE
(JA) 半導体装置、記憶装置、及び電子機器
Abstract:
(EN) Provided is a storage device in which the parasitic capacitance of a bit line has been reduced. The storage device comprises a sense amplifier that is electrically connected to a bit line, and a memory cell array that is layered upon the sense amplifier. The memory cell array comprises a plurality of memory cells. Each of the memory cells is electrically connected to the bit line. A bit line routing part is not provided within the memory cell array. Therefore, the bit line can be shortened, and the parasitic capacitance of the bit line is reduced.
(FR) L'invention concerne un dispositif de stockage dans lequel la capacité parasite d'une ligne de bits a été réduite. Le dispositif de stockage comprend un amplificateur de détection qui est électroconnecté à une ligne de bits, et un réseau de cellules de mémoire qui est stratifié sur l'amplificateur de détection. Le réseau de cellules de mémoire comprend une pluralité de cellules de mémoire. Chacune des cellules de mémoire est électroconnectée à la ligne de bits. Une partie de routage de ligne de bits n'est pas disposée à l'intérieur du réseau de cellules de mémoire. Par conséquent, la ligne de bits peut être raccourcie, et la capacité parasite de la ligne de bits est réduite.
(JA) 要約書 ビット線寄生容量が低減された記憶装置を提供する。 記憶装置は、 ビット線に電気的に接続されているセンスアンプと、 センスアンプ上に積層されている メモリセルアレイとを有する。メモリセルアレイは複数のメモリセルを有する。複数のメモリセルは、 それぞれ、 ビット線に電気的に接続されている。 メモリセルアレイ内には、 ビット線の引き回し部分 が設けられていない。そのため、ビット線を短くでき、ビット線寄生容量が低減される。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)