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1. (WO2019048385) METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP, AND OPTOELECTRONIC SEMICONDUCTOR CHIP
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Pub. No.: WO/2019/048385 International Application No.: PCT/EP2018/073625
Publication Date: 14.03.2019 International Filing Date: 03.09.2018
IPC:
H01L 33/22 (2010.01) ,H01L 33/20 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
20
with a particular shape, e.g. curved or truncated substrate
22
Roughened surfaces, e.g. at the interface between epitaxial layers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
20
with a particular shape, e.g. curved or truncated substrate
Applicants:
OSRAM OPTO SEMICONDUCTORS GMBH [DE/DE]; Leibnizstr. 4 93055 Regensburg, DE
Inventors:
HUBER, Michael; DE
SOMMERFELD, Jana; DE
HERZ, Martin; DE
HOIBL, Sebastian; DE
RUMBOLZ, Christian; DE
KIESLICH, Albrecht; DE
BÖHM, Bernd; DE
ROSSBACH, Georg; DE
BRÖLL, Markus; DE
Agent:
EPPING HERMANN FISCHER PATENTANWALTSGESELLSCHAFT MBH; Schloßschmidstr. 5 80639 München, DE
Priority Data:
10 2017 120 493.806.09.2017DE
10 2017 121 028.812.09.2017DE
10 2018 107 615.029.03.2018DE
Title (EN) METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP, AND OPTOELECTRONIC SEMICONDUCTOR CHIP
(FR) PROCÉDÉ DE FABRICATION D'UNE PUCE SEMI-CONDUCTRICE OPTOÉLECTRONIQUE ET PUCE SEMI-CONDUCTRICE OPTOÉLECTRONIQUE
(DE) VERFAHREN ZUR HERSTELLUNG EINES OPTOELEKTRONISCHEN HALBLEITERCHIPS UND OPTOELEKTRONISCHER HALBLEITERCHIP
Abstract:
(EN) The invention relates to a method for producing an opto-electronic semiconductor chip comprising the following steps: providing a semiconductor body (1) having a radiation-permeable surface (1a), and introducing structures (2) into the semiconductor body (1) on the radiation-permeable surface (1a), wherein the structures (2) are quasi-regular.
(FR) L'invention concerne un procédé de fabrication d'une puce semi-conductrice optoélectronique comprenant les étapes suivantes consistant à : prendre un corps semi-conducteur (1) présentant une surface de passage de rayonnement (1a) et ménager des structures (2) dans le corps semi-conducteur (1) sur la surface de passage de rayonnement (1a), ces structures (2) étant disposées quasi régulièrement.
(DE) Es wird ein Verfahren zur Herstellung eines optoelektronischen Halbleiterchips mit den folgenden Schritten angegeben: - Bereitstellen eines Halbleiterkörpers (1) mit einer Strahlungsdurchtrittsflache (1a), und - Einbringen von Strukturen (2) in den Halbleiterkörper (1) an der Strahlungsdurchtrittsfläche (1a), wobei - die Strukturen (2) quasi-regelmäßig angeordnet werden.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: German (DE)
Filing Language: German (DE)