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1. WO2019048385 - METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP, AND OPTOELECTRONIC SEMICONDUCTOR CHIP

Publication Number WO/2019/048385
Publication Date 14.03.2019
International Application No. PCT/EP2018/073625
International Filing Date 03.09.2018
IPC
H01L 33/22 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
22Roughened surfaces, e.g. at the interface between epitaxial layers
H01L 33/20 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
CPC
H01L 33/20
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
H01L 33/22
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
22Roughened surfaces, e.g. at the interface between epitaxial layers
H01L 33/46
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
44characterised by the coatings, e.g. passivation layer or anti-reflective coating
46Reflective coating, e.g. dielectric Bragg reflector
Applicants
  • OSRAM OLED GMBH [DE]/[DE]
Inventors
  • HUBER, Michael
  • SOMMERFELD, Jana
  • HERZ, Martin
  • HOIBL, Sebastian
  • RUMBOLZ, Christian
  • KIESLICH, Albrecht
  • BÖHM, Bernd
  • ROSSBACH, Georg
  • BRÖLL, Markus
Agents
  • KANZIAN, Tanja
Priority Data
10 2017 120 493.806.09.2017DE
10 2017 121 028.812.09.2017DE
10 2018 107 615.029.03.2018DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) VERFAHREN ZUR HERSTELLUNG EINES OPTOELEKTRONISCHEN HALBLEITERCHIPS UND OPTOELEKTRONISCHER HALBLEITERCHIP
(EN) METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP, AND OPTOELECTRONIC SEMICONDUCTOR CHIP
(FR) PROCÉDÉ DE FABRICATION D'UNE PUCE SEMI-CONDUCTRICE OPTOÉLECTRONIQUE ET PUCE SEMI-CONDUCTRICE OPTOÉLECTRONIQUE
Abstract
(DE)
Es wird ein Verfahren zur Herstellung eines optoelektronischen Halbleiterchips mit den folgenden Schritten angegeben: - Bereitstellen eines Halbleiterkörpers (1) mit einer Strahlungsdurchtrittsflache (1a), und - Einbringen von Strukturen (2) in den Halbleiterkörper (1) an der Strahlungsdurchtrittsfläche (1a), wobei - die Strukturen (2) quasi-regelmäßig angeordnet werden.
(EN)
The invention relates to a method for producing an opto-electronic semiconductor chip comprising the following steps: providing a semiconductor body (1) having a radiation-permeable surface (1a), and introducing structures (2) into the semiconductor body (1) on the radiation-permeable surface (1a), wherein the structures (2) are quasi-regular.
(FR)
L'invention concerne un procédé de fabrication d'une puce semi-conductrice optoélectronique comprenant les étapes suivantes consistant à : prendre un corps semi-conducteur (1) présentant une surface de passage de rayonnement (1a) et ménager des structures (2) dans le corps semi-conducteur (1) sur la surface de passage de rayonnement (1a), ces structures (2) étant disposées quasi régulièrement.
Also published as
Latest bibliographic data on file with the International Bureau