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1. (WO2019048370) LIGHT-EMITTING SEMICONDUCTOR COMPONENT
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Pub. No.: WO/2019/048370 International Application No.: PCT/EP2018/073594
Publication Date: 14.03.2019 International Filing Date: 03.09.2018
IPC:
H01L 33/02 (2010.01) ,H01L 33/22 (2010.01) ,H01L 33/30 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
20
with a particular shape, e.g. curved or truncated substrate
22
Roughened surfaces, e.g. at the interface between epitaxial layers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
26
Materials of the light emitting region
30
containing only elements of group III and group V of the periodic system
Applicants:
OSRAM OPTO SEMICONDUCTORS GMBH [DE/DE]; Leibnizstr. 4 93055 Regensburg, DE
Inventors:
TONKIKH, Alexander; DE
GÖÖTZ, Britta; DE
Agent:
EPPING HERMANN FISCHER PATENTANWALTSGESELLSCHAFT MBH; Schloßschmidstr. 5 80639 München, DE
Priority Data:
10 2017 120 522.506.09.2017DE
Title (EN) LIGHT-EMITTING SEMICONDUCTOR COMPONENT
(FR) COMPOSANT SEMI-CONDUCTEUR ÉLECTROLUMINESCENT
(DE) LICHT EMITTIERENDES HALBLEITERBAUELEMENT
Abstract:
(EN) The invention relates to a light-emitting semiconductor component (100) having a semiconductor layer sequence (1) based on a phosphide and/or arsenide compound semiconductor material system, wherein the semiconductor layer sequence (1) has a light-emitting semiconductor layer (10), which is designed to emit light during operation of the semiconductor component (100), between a first cladding layer (11) and a second cladding layer (12) and at least one first semiconductor protection layer (13), the first semiconductor protection layer (13) is arranged within the first cladding layer (11), formed as the outer layer, or directly on the first cladding layer (11) on a side facing away from the light-emitting semiconductor layer (10), as an outer layer, and the first semiconductor protection layer (13) has a lower aluminum content than the first cladding layer.
(FR) L’invention concerne un composant semi-conducteur électroluminescent (100) pourvu d’un empilement de couches semi-conductrices (1) à base d’un système de matériaux semi-conducteurs de composés de phosphure et/ou d’arséniure, l’empilement de couches semi-conductrices (1) comportant une couche semi-conductrice électroluminescente (10), qui sert à émettre de la lumière lors du fonctionnement du composant semi-conducteur (100), entre une première couche de gaine (11) et une deuxième couche de gaine (12) ainsi qu’au moins une première couche semi-conductrice protectrice (13), la première couche semi-conductrice protectrice (13) étant agencée à l’intérieur de la première couche de gaine (11) servant de couche extérieure ou directement sur la première couche de gaine (11) en tant que couche extérieure sur un côté détourné de la couche semi-conductrice électroluminescente (10) et la première couche semi-conductrice protectrice (13) comportant une teneur en aluminium inférieure à celle de la première couche de gaine.
(DE) Es wird ein Licht emittierendes Halbleiterbauelement (100) mit einer Halbleiterschichtenfolge (1) basierend auf einem Phosphid- und/oder Arsenid- Verbindungshalbleitermaterialsystem angegeben, wobei-die Halbleiterschichtenfolge (1) eine Licht emittierende Halbleiterschicht (10), die dazu eingerichtet ist, im Betrieb des Halbleiterbauelements (100) Licht abzustrahlen, zwischen einer ersten Mantelschicht (11) und einer zweiten Mantelschicht (12) sowie zumindest eine erste Halbleiterschutzschicht (13) aufweist,die erste Halbleiterschutzschicht (13) innerhalb der als Außenschicht ausgebildeten ersten Mantelschicht (11) oder unmittelbar auf der ersten Mantelschicht (11) auf einer der Licht emittierenden Halbleiterschicht (10) abgewandten Seite als Außenschicht angeordnet ist und die erste Halbleiterschutzschicht (13) einen niedrigeren Aluminiumgehalt als die erste Mantelschicht aufweist.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: German (DE)
Filing Language: German (DE)