Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2019048147) METHODS AND PATTERNING DEVICES AND APPARATUSES FOR MEASURING FOCUS PERFORMANCE OF A LITHOGRAPHIC APPARATUS, DEVICE MANUFACTURING METHOD
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/048147 International Application No.: PCT/EP2018/071103
Publication Date: 14.03.2019 International Filing Date: 03.08.2018
IPC:
G03F 7/20 (2006.01) ,G03F 1/24 (2012.01) ,G21K 1/06 (2006.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20
Exposure; Apparatus therefor
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1
Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
22
Masks or mask blanks for imaging by radiation of 100 nm or shorter wavelength, e.g. X-ray masks, extreme ultra-violet [EUV] masks; Preparation thereof
24
Reflection masks; Preparation thereof
G PHYSICS
21
NUCLEAR PHYSICS; NUCLEAR ENGINEERING
K
TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
1
Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
06
using diffraction, refraction, or reflection, e.g. monochromators
Applicants:
ASML NETHERLANDS B.V. [NL/NL]; P.O. Box 324 5500 AH Veldhoven, NL
Inventors:
DE WINTER, Laurentius, Cornelius; NL
STOLK, Roland, Pieter; NL
STAALS, Frank; NL
VAN OOSTEN, Anton, Bernhard; NL
HINNEN, Paul, Christiaan; NL
JOCHEMSEN, Marinus; NL
THEEUWES, Thomas; NL
VAN SETTEN, Eelco; NL
Agent:
WILLEKENS, Jeroen, Pieter, Frank; NL
Priority Data:
17190433.711.09.2017EP
18160202.006.03.2018EP
18183603.216.07.2018EP
Title (EN) METHODS AND PATTERNING DEVICES AND APPARATUSES FOR MEASURING FOCUS PERFORMANCE OF A LITHOGRAPHIC APPARATUS, DEVICE MANUFACTURING METHOD
(FR) PROCÉDÉS ET DISPOSITIFS DE FORMATION DE MOTIFS ET APPAREILS PERMETTANT DE MESURER LES PERFORMANCES DE MISE AU POINT D’UN APPAREIL LITHOGRAPHIQUE, ET PROCÉDÉ DE FABRICATION DE DISPOSITIF
Abstract:
(EN) Disclosed is a method of measuring focus performance of a lithographic apparatus, and corresponding patterning device and lithographic apparatus. The method comprises using the lithographic apparatus to print one or more first printed structures and second printed structures. The first printed structures are printed by illumination having a first non-telecentricity and the second printed structures being printed by illumination having a second non-telecentricity, different to said first non-telecentricity. A focus dependent parameter related to a focus- dependent positional shift between the first printed structures and the second printed structures on said substrate is measured and a measurement of focus performance based at least in part on the focus dependent parameter is derived therefrom.
(FR) La présente invention concerne un procédé permettant de mesurer les performances de mise au point d'un appareil lithographique, un dispositif de formations de motifs et un appareil lithographique associés. Le procédé consiste à utiliser l'appareil lithographique pour imprimer une ou plusieurs premières et secondes structures imprimées. Les premières structures imprimées sont imprimées par un éclairage ayant une première non-télécentricité et les secondes structures imprimées sont imprimées par un éclairage ayant une seconde non-télécentricité différente de ladite première non-télécentricité. Un paramètre dépendant de la mise au point associé à un décalage de position dépendant de la mise au point et ayant lieu sur ledit substrat entre les premières structures imprimées et les secondes structures imprimées est mesuré, et une mesure des performances de mise au point basée au moins en partie sur le paramètre dépendant de la mise au point est dérivée de celui-ci.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)