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1. (WO2019047988) TRANSVERSELY TWO-WAY DIFFUSED METAL OXIDE SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
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Pub. No.: WO/2019/047988 International Application No.: PCT/CN2018/900005
Publication Date: 14.03.2019 International Filing Date: 01.09.2018
IPC:
H01L 29/78 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
Applicants:
无锡华润上华科技有限公司 CSMC TECHNOLOGIES FAB2 CO., LTD. [CN/CN]; 中国江苏省无锡市 新区新洲路8号 No. 8 Xinzhou Road Wuxi New District, Jiangsu 214028, CN
Inventors:
何乃龙 HE, Nailong; CN
张森 ZHANG, Sen; CN
李许超 LI, Xuchao; CN
Agent:
广州华进联合专利商标代理有限公司 ADVANCE CHINA IP LAW OFFICE; 中国广东省广州市天河区珠江东路6号4501房 (部位:自编01-03和08-12单元)(仅限办公用途) Room 4501, No. 6 Zhujiang East Road, Tianhe District, Guangzhou Guangdong 510623, CN
Priority Data:
201710801871.707.09.2017CN
Title (EN) TRANSVERSELY TWO-WAY DIFFUSED METAL OXIDE SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
(FR) COMPOSANT SEMI-CONDUCTEUR À OXYDE MÉTALLIQUE À DIFFUSION BIDIRECTIONNELLE TRANSVERSALEMENT ET SON PROCÉDÉ DE FABRICATION
(ZH) 横向双扩散金属氧化物半导体器件及其制作方法
Abstract:
(EN) A transversely two-way diffused metal oxide semiconductor component and a manufacturing method therefor. The transversely two-way diffused metal oxide semiconductor component comprises: a semiconductor substrate, the semiconductor substrate being provided thereon with a drift area; the drift area being provided therein with a trap area and a drain area, the trap area being provided therein with an active area and a channel; the drift area being provided therein with a deep trench isolation structure arranged between the trap area and the drain area, and the deep trench isolation structure being provided at the bottom thereof with alternately arranged first p-type injection areas and first n-type injection areas.
(FR) L'invention concerne un composant semi-conducteur à oxyde métallique à diffusion bidirectionnelle transversalement et son procédé de fabrication. Le composant semi-conducteur à oxyde métallique à diffusion bidirectionnelle transversalement comprend : un substrat semi-conducteur, sur lequel est disposée une zone de dérive. La zone de dérive comprend une zone de piège et d'une zone de drain, la zone de piège comprenant une zone active et un canal, et comprend intérieurement une structure d'isolation en tranchée profonde agencée entre la zone de piège et la zone de drain, la structure d'isolation en tranchée profonde étant disposée au fond de ladite zone de dérive et présentant des premières zones d'injection du type P et des premières zones d'injection du type N disposées en alternance.
(ZH) 一种横向双扩散金属氧化物半导体器件及其制作方法,该横向双扩散金属氧化物半导体器件包括:半导体衬底,在所述半导体衬底上形成有漂移区;在所述漂移区中形成有阱区和漏区,在所述阱区中形成有源区和沟道;在所述漂移区中形成有位于所述阱区和所述漏区之间的深沟槽隔离结构,在所述深沟槽隔离结构的底部形成有交替设置的第一P型注入区和第一N型注入区。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)