Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2019047379) POST CLEANING METHOD FOR TUNGSTEN CHEMICAL MECHANICAL PLANARIZATION, AND WAFER
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/047379 International Application No.: PCT/CN2017/112066
Publication Date: 14.03.2019 International Filing Date: 21.11.2017
IPC:
H01L 21/02 (2006.01) ,H01L 23/538 (2006.01) ,B08B 3/08 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
52
Arrangements for conducting electric current within the device in operation from one component to another
538
the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
B PERFORMING OPERATIONS; TRANSPORTING
08
CLEANING
B
CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
3
Cleaning by methods involving the use or presence of liquid or steam
04
Cleaning involving contact with liquid
08
the liquid having chemical or dissolving effect
Applicants:
北京半导体专用设备研究所(中国电子科技集团公司第四十五研究所) BEIJING SEMICONDUCTOR EQUIPMENT INSTITUTE (THE 45TH RESEARCH INSTITUTE OF CETC) [CN/CN]; 中国北京市 经济技术开发区泰河三街1号 Number 1, Taihe Sanjie Street, Beijing Economic and Technological Development Zone Beijing 100176, CN
Inventors:
张康 ZHANG, Kang; CN
李婷 LI, Ting; CN
孙铭泽 SUN, Mingze; CN
Agent:
北京超凡志成知识产权代理事务所(普通合伙) CHOFN INTELLECTUAL PROPERTY; 中国北京市 海淀区北四环西路68号左岸工社1215-1218室 Room 1215-1218, Floor 12 Left Bank Community No.68 Beisihuanxilu, Haidian District Beijing 100080, CN
Priority Data:
201710811339.311.09.2017CN
Title (EN) POST CLEANING METHOD FOR TUNGSTEN CHEMICAL MECHANICAL PLANARIZATION, AND WAFER
(FR) PROCÉDÉ DE POST-NETTOYAGE POUR PLANARISATION CHIMICO-MÉCANIQUE (CMP) DE TUNGSTÈNE, ET TRANCHE
(ZH) 一种钨化学机械平坦化的后清洗方法及晶圆
Abstract:
(EN) The present invention provides a post cleaning method for tungsten chemical mechanical planarization and a wafer. The post cleaning method process for tungsten chemical mechanical planarization in the present invention is simple, uses a specific stepwise operation of cleaning, scrubbing, washing and spin drying, and has a good cleaning effect, effectively reducing the oxidation and electrochemical corrosion to W plug during the CMP post cleaning process, avoiding more serious defects of dished W recess of the W plug, optimizing Zeta electric potential of the wafer surface, lowering the risk of re-contamination on the wafer after CMP. The present invention also provides a wafer obtained by the described post cleaning method for tungsten chemical mechanical planarization, the wafer having the advantage of leaving less residual particles on the surface, and having a lower amount of corrosion.
(FR) L'invention concerne un procédé de post-nettoyage pour planarisation chimico-mécanique (CMP) de tungstène, et une tranche. Le procédé de l'invention est simple, met en œuvre une opération progressive spécifique de nettoyage, d'épuration, de lavage et de séchage par centrifugation, et crée un bel effet de nettoyaget réduisant efficacement l'oxydation et la corrosion électrochimiques d'un bouchon W pendant le processus de post-nettoyage CMP, ce qui évite des défauts plus graves de l'évidement en W incurvé du bouchon W, optimise le potentiel électrocinéque de la surface de la tranche, réduit le risque de re-contamination sur la tranche après CMP. L'invention concerne également une tranche obtenue par ledit procédé de post-nettoyage pour planarisation chimico-mécanique de tungstène, la tranche présentant l'avantage de laisser moins de particules résiduelles sur la surface, et d'avoir un niveau de corrosion plus faible.
(ZH) 本发明提供了一种钨化学机械平坦化的后清洗方法及晶圆,本发明钨化学机械平坦化的后清洗方法工艺简单,采用特定分步清洗、刷洗、冲洗和甩干操作,清洗效果好,能够有效降低CMP后清洗工艺过程中对于W plug的氧化及电化学腐蚀,避免造成更严重的钨塞的碟形凹陷(W recess)缺陷,还能够优化晶圆表面Zeta电势,降低晶圆在CMP后被再次沾污的风险。本发明还提供了一种采用上述明钨化学机械平坦化的后清洗方法清洗得到的晶圆,该晶圆具有表面颗粒残留少,被腐蚀度程度低的优点。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)