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1. (WO2019047235) PHASE MODULATOR AND FABRICATION METHOD THEREFOR, AND SILICON-SUBSTRATE ELECTRO-OPTIC MODULATOR
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Pub. No.: WO/2019/047235 International Application No.: PCT/CN2017/101286
Publication Date: 14.03.2019 International Filing Date: 11.09.2017
IPC:
G02F 1/025 (2006.01)
G PHYSICS
02
OPTICS
F
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1
Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01
for the control of the intensity, phase, polarisation or colour
015
based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
025
in an optical waveguide structure
Applicants:
华为技术有限公司 HUAWEI TECHNOLOGIES CO., LTD. [CN/CN]; 中国广东省深圳市 龙岗区坂田华为总部办公楼 Huawei Administration Building Bantian, Longgang District Shenzhen, Guangdong 518129, CN
Inventors:
王志仁 WONG, Chi Yan; CN
周林杰 ZHOU, Linjie; CN
周砚扬 ZHOU, Yanyang; CN
刘磊 LIU, Lei; CN
Agent:
深圳市深佳知识产权代理事务所(普通合伙) SHENPAT INTELLECTUAL PROPERTY AGENCY; 中国广东省深圳市 国贸大厦15楼西座1521室 Room 1521 West Block, Guomao Building Shenzhen, Guangdong 518014, CN
Priority Data:
Title (EN) PHASE MODULATOR AND FABRICATION METHOD THEREFOR, AND SILICON-SUBSTRATE ELECTRO-OPTIC MODULATOR
(FR) MODULATEUR DE PHASE ET SON PROCÉDÉ DE FABRICATION ET MODULATEUR ÉLECTRO-OPTIQUE À SUBSTRAT DE SILICIUM
(ZH) 相位调制器及其制作方法、硅基电光调制器
Abstract:
(EN) A phase modulator and a fabrication method therefor, and a silicon-substrate electro-optic modulator. A P-type doped region (2) is divided by the phase modulator into a first P-type doped region (21) and a second P-type doped region (22); an N-type doped region (3) is divided into a first N-type doped region (31) and a second N-type doped region (32), wherein the doping concentration of the second P-type doped region (22) is smaller than that of the first P-type doped region (21), and the doping concentration of the second N-type doped region (32) is smaller than that of the first N-type doped region (31), thus achieving good electrical contact between the phase modulator and a driving circuit by using the heavy doping concentrations of the first P-type doped region (21) and the first N-type doped region (31), as well as reducing the doping concentration of the P-type doped region (2) at one side close to a PN junction structure (1) by using the second P-type doped region (22), reducing the doping concentration of the N-type doped region (3) at one side close to the PN junction structure (1) by using the second N-type doped region (32), and reducing the optical transmission loss of the phase modulator, thereby reducing the optical transmission loss of the silicon-substrate electro-optic modulator.
(FR) L'invention concerne un modulateur de phase et son procédé de fabrication et un modulateur électro-optique à substrat de silicium. Une région dopée de type P (2) est divisée par le modulateur de phase en une première région dopée de type P (21) et une seconde région dopée de type P (22) ; une région dopée de type N (3) est divisée en une première région dopée de type N (31) et une seconde région dopée de type N (32), la concentration de dopage de la seconde région dopée de type P (22) étant inférieure à celle de la première région dopée de type P (21) et la concentration de dopage de la seconde région dopée de type N (32) étant inférieure à celle de la première région dopée de type N (31), ce qui permet d'obtenir un bon contact électrique entre le modulateur de phase et un circuit d'attaque en utilisant les concentrations de dopage lourdes de la première région dopée de type P (21) et de la première région dopée de type N (31), ainsi que la réduction de la concentration de dopage de la région dopée de type P (2) sur un côté proche d'une structure de jonction PN (1) en utilisant la seconde région dopée de type P (22), la réduction de la concentration de dopage de la région dopée de type N (3) sur un côté proche de la structure de jonction PN (1) en utilisant la seconde région dopée de type N (32) et la réduction de la perte de transmission optique du modulateur de phase, ce qui réduit la perte de transmission optique du modulateur électro-optique à substrat de silicium.
(ZH) 一种相位调制器及其制作方法以及一种硅基电光调制器,该相位调制器通过将P型掺杂区(2)划分成第一P型掺杂区(21)和第二P型掺杂区(22)两部分,将N型掺杂区(3)划分成第一N型掺杂区(31)和第二N型掺杂区(32)两部分,其中,第二P型掺杂区(22)的掺杂浓度小于第一P型掺杂区(21)的掺杂浓度,第二N型掺杂区(32)的掺杂浓度小于第一N型掺杂区(31)的掺杂浓度,从而利用第一P型掺杂区(21)和第一N型掺杂区(31)的重掺杂浓度实现相位调制器与驱动电路的良好电接触,并利用第二P型掺杂区(22)来降低P型掺杂区(2)靠近PN结结构(1)一侧的掺杂浓度,利用第二N型掺杂区(32)来降低N型掺杂区(3)靠近PN结结构(1)一侧的掺杂浓度,降低相位调制器的光传输损耗,进而降低硅基电光调制器的光传输损耗。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)