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1. (WO2019047082) METHOD FOR FORMING ALUMINUM SURFACE SELENIUM TREATED NANO COATING FOR IMPROVING LOW FREQUENCY EXTENSION OF EARPHONE
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Pub. No.: WO/2019/047082 International Application No.: PCT/CN2017/100784
Publication Date: 14.03.2019 International Filing Date: 06.09.2017
IPC:
H04R 31/00 (2006.01) ,H04R 7/00 (2006.01) ,H04R 7/02 (2006.01) ,H04R 7/04 (2006.01)
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
R
LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
31
Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
R
LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
7
Diaphragms for electromechanical transducers; Cones
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
R
LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
7
Diaphragms for electromechanical transducers; Cones
02
characterised by the construction
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
R
LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
7
Diaphragms for electromechanical transducers; Cones
02
characterised by the construction
04
Plane diaphragms
Applicants:
深圳市同富达电子科技有限公司 SHENZHEN TONGFUDA ELECTRONIC TECHNOLOGY CO., LTD. [CN/CN]; 中国广东省深圳 龙华新区大浪浪口工业区荣鸿泰工业园40栋五楼 5th Floor, Block 40, Ronghongtai Industrial Park Langkou Industrial Area, Dalang, Longhua District Shenzhen, Guangdong 518000, CN
扬州大学 YANGZHOU UNIVERSITY [CN/CN]; 中国江苏省扬州市 大学南路88号 No. 88, South University Road Yangzhou, Jiangsu 225002, CN
Inventors:
俞磊 YU, Lei; CN
陆朝晖 LU, Zhaohui; CN
杨钰帆 YANG, Yufan; CN
陆朝阳 LU, Zhaoyang; CN
Agent:
深圳市智胜联合知识产权代理有限公司 NOZO & ASSOCIATES; 中国广东省深圳市 南山区南头街道智恒新兴产业园E区01B栋405室 Room 405, Building 01B, Area E Zhiheng New Industrial Park, Nantou, Nanshan District Shenzhen, Guangdong 518000, CN
李永华 LI, Yonghua; CN
张广兴 ZHANG, Guangxing; CN
Priority Data:
Title (EN) METHOD FOR FORMING ALUMINUM SURFACE SELENIUM TREATED NANO COATING FOR IMPROVING LOW FREQUENCY EXTENSION OF EARPHONE
(FR) PROCÉDÉ DE FORMATION DE NANO-REVÊTEMENT TRAITÉ AU SÉLÉNIUM EN SURFACE D'ALUMINIUM POUR AMÉLIORER L'EXTENSION BASSE FRÉQUENCE D'UN ÉCOUTEUR
(ZH) 一种改善耳机低频延伸铝表面硒处理纳米涂层的形成方法
Abstract:
(EN) Provided is a method for forming an aluminum surface selenium treated nano coating for improving low frequency extension of an earphone. The method comprises: immersing an aluminum film in a water mixed solution of glucose and 2-chloro-4-nitrobenzene seleninic acid for 12 to 24 hours at an ambient temperature of 40 to 90 ° C, and then calcining the such treated aluminum film 500 to 600 ° C for 2 to 8 hours. The method is simple and easy to implement, and can greatly improve the low frequency extension of the earphone while using a cheap and easy-to-obtain aluminum film.
(FR) L'invention concerne un procédé de formation d'un nano-revêtement traité au sélénium en surface d'aluminium pour améliorer l'extension basse fréquence d'un écouteur. Le procédé comprend : l'immersion d'un film d'aluminium dans une solution mixte d'eau de glucose et d'acide sélénique 2-chloro-4-nitrobenzène pendant 12 à 24 heures à une température ambiante de 40 à 90 °C, puis la calcination de ce film d'aluminium traité de 500 à 600 °C pendant 2 à 8 heures. Le procédé est simple et facile à mettre en oeuvre, et peut grandement améliorer l'extension basse fréquence de l'écouteur tout en utilisant un film d'aluminium bon marché et facile à obtenir.
(ZH) 一种改善耳机低频延伸铝表面硒处理纳米涂层的形成方法,先在40~90℃环境温度条件下,将铝膜在葡萄糖、2-氯-4硝基苯亚硒酸的水混合溶液中浸渍12~24h后,在500~600℃焙烧2~8h。该方法步骤简单易行,可在使用廉价易得的铝膜的同时,大大改善耳机低频延伸。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)