Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2019047057) LED ENCAPSULATION STRUCTURE AND ENCAPSULATION METHOD THEREFOR
Latest bibliographic data on file with the International BureauSubmit observation

Pub. No.: WO/2019/047057 International Application No.: PCT/CN2017/100692
Publication Date: 14.03.2019 International Filing Date: 06.09.2017
IPC:
H01L 33/00 (2010.01) ,H01L 33/52 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
52
Encapsulations
Applicants:
深圳前海小有技术有限公司 SHENZHEN QIANHAI XIAOYOU TECHNOLOGY CO., LTD. [CN/CN]; 中国广东省深圳市 前海深港合作区前湾一路1号A栋201室万永泉 WAN, Yongquan Room 201, A Building No. 1 Qianwan 1st Road, Zone of Shenzhen-Hongkong Cooperation Shenzhen, Guangdong 518000, CN
深圳佑荟半导体有限公司 SHENZHEN UVEI SILICON CO., LTD. [CN/CN]; 中国广东省深圳市 福田区华富街道彩田路东方新天地广场C座2006-122万永泉 WAN, Yongquan Room 2006-122, C Tower, Oriental Plaza Caitian Road, Huafu Street, Futian District Shenzhen, Guangdong 518000, CN
Inventors:
何宗江 HE, Zongjiang; CN
贾志强 JIA, Zhiqiang; CN
Agent:
深圳国新南方知识产权代理有限公司 SHENZHEN CHINA INNOVATION SOUTH INTELLECTUAL PROPERTY AGENCY CO., LTD.; 中国广东省深圳市 福田区深南大道1006号深圳国际创新中心C座22层陈艳欢 CHEN, Yanhuan 22F, Block C, Shenzhen International Innovation Center No. 1006 Shennan Road, Futian District Shenzhen, Guangdong 518000, CN
Priority Data:
Title (EN) LED ENCAPSULATION STRUCTURE AND ENCAPSULATION METHOD THEREFOR
(FR) STRUCTURE D'ENCAPSULATION DE DEL ET PROCÉDÉ D'ENCAPSULATION DE CELLE-CI
(ZH) LED封装结构及其封装方法
Abstract:
(EN) Provided are an LED encapsulation structure and an encapsulation method therefor. The encapsulation structure comprises: a bracket (1), which has a chip carrier (2); a chip (7), which is provided on the chip carrier; an aluminium nitride layer (9), which is deposited on the chip carrier and the chip located on the chip carrier; an encapsulated electrode, which is used for allowing the chip to be electrically connected to the exterior; and a quartz cover (8), which is formed by curing of fused quartz, and covers the upper surface of the bracket. The invention uses the fused quartz to encapsulate the LED chip, realizing full inorganic encapsulation without using organic adhesive, achieving good sealing and stability, and by means of the design of the aluminium nitride layer, the invention can fix and protect the LED chip, and can also increase the amount of light emitted.
(FR) L’invention concerne une structure d’encapsulation de DEL et un procédé d'encapsulation de celle-ci. La structure d'encapsulation comprend : un support (1), qui a un porte-puce (2) ; une puce (7), qui est disposée sur le porte-puce ; une couche de nitrure d'aluminium (9), qui est déposée sur le porte-puce et la puce située sur le porte-puce ; une électrode encapsulée, qui est utilisée pour permettre à la puce d'être électroconnectée à l'extérieur ; et un couvercle en quartz (8), qui est formé par durcissement de quartz fondu, et recouvre la surface supérieure du support. L'invention utilise le quartz fondu pour encapsuler la puce de DEL, réalisant une encapsulation inorganique complète sans utiliser d'adhésif organique, ce qui permet d'obtenir une bonne étanchéité et une bonne stabilité, et au moyen de la conception de la couche de nitrure d'aluminium, l'invention peut fixer et protéger la puce de DEL, et peut également augmenter la quantité de lumière émise.
(ZH) 提供一种LED封装结构及其封装方法,该封装结构包括:托架(1),托架具有芯片座(2);芯片(7),芯片设置于芯片座上;氮化铝层(9),氮化铝层沉积在芯片座及位于该芯片座上的芯片上;封装电极,封装电极用于使芯片与外部电连接;以及石英罩(8),石英罩由熔融石英固化形成,覆盖托架的上表面。通过采用熔融石英对LED芯片进行密封,实现了不采用有机粘合剂的全无机封装,可以获得良好的密封性和稳定性,通过氮化铝层的设计,可以对LED芯片进行固定和保护,同时也可以增加出光量。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)