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1. WO2019046777 - POLAR NANOREGIONS ENGINEERED RELAXOR-PbTiO3 FERROELECTRIC CRYSTALS

Publication Number WO/2019/046777
Publication Date 07.03.2019
International Application No. PCT/US2018/049194
International Filing Date 31.08.2018
IPC
H01L 41/187 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
16Selection of materials
18for piezo-electric or electrostrictive elements
187Ceramic compositions
H01L 41/316 2013.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
22Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
31Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base
314by depositing piezo-electric or electrostrictive layers, e.g. aerosol or screen printing
316by vapour phase deposition
CPC
C30B 11/00
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
11Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
C30B 29/30
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
16Oxides
22Complex oxides
30Niobates; Vanadates; Tantalates
C30B 29/32
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
16Oxides
22Complex oxides
32Titanates; Germanates; Molybdates; Tungstates
H01L 41/18
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
16Selection of materials
18for piezo-electric or electrostrictive devices ; , e.g. bulk piezo-electric crystals
H01L 41/1875
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
16Selection of materials
18for piezo-electric or electrostrictive devices ; , e.g. bulk piezo-electric crystals
187Ceramic compositions ; , i.e. synthetic inorganic polycrystalline compounds incl. epitaxial, quasi-crystalline materials
1875Lead based oxides
H01L 41/41
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
22Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
35Forming piezo-electric or electrostrictive materials
39Inorganic materials
41by melting
Applicants
  • TRS TECHNOLOGIES, INC. [US]/[US]
  • THE PENN STATE RESEARCH FOUNDATION [US]/[US]
Inventors
  • LUO, Jun
  • HACKENBERGER, Wesley S.
  • LI, Fei
  • ZHANG, Shujun
  • SHROUT, Thomas R.
Agents
  • MARCUS, David
  • CROUSE, Brett A.
  • DOBREA, Diane
  • HAVERSTICK, Kraig L.
  • LEPPO, Shawn K.
  • O'BRIAN, K. Scott
  • OLTMANS, Andrew L.
Priority Data
62/553,51101.09.2017US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) POLAR NANOREGIONS ENGINEERED RELAXOR-PbTiO3 FERROELECTRIC CRYSTALS
(FR) CRISTAUX FERROÉLECTRIQUES FORMÉS D'UN COMPLEXE RELAXEUR-PBTIO3 MODIFIÉS PAR DES NANORÉGIONS POLAIRES
Abstract
(EN)
A relaxor-PT based piezoelectric crystal is disclosed, comprising the general formula of (Pb1-1.5xMx){[(MI,MII)1-z(MI',MII')z]1-yTiy}O3, wherein: M is a rare earth cation; MI is selected from the group consisting of Mg2+, Zn2+, Yb3+, Sc3+, and In3+; MII is Nb5+; MI' is selected from the group consisting of Mg2+, Zn2+, Yb3+, Sc3+, In3+, and Zr4; MII' is Nb5+ or Zr4+; 0 < x ≤ 0.05; 0.02 < y < 0.7; and 0 ≤ z ≤ 1, provided that if either MI' or MII' is Zr4+, both MI' and MII' are Zr4+. A method for forming the relaxor-PT based piezoelectric crystal is disclosed, comprising pre-synthesizing precursor materials by calcining mixed oxides, mixing the precursor materials with single oxides and calcining to form a feeding material, and growing the relaxor-PT based piezoelectric crystal having the general formula of (Pb1-1.5xMx){[(MI,MII)1-z(MI',MII')z]1-yTiy}O3 from the feeding material by a Bridgman method.
(FR)
L'invention concerne un cristal piézoélectrique à base d'un complexe relaxeur-PT, présentant la formule générale suivante : (Pb1-1,5xMx){[(MI,MII)1-z(MI',MII')z]1-yTiy}O3, dans laquelle : M représente un cation de terre rare ; MI est choisi dans le groupe constitué de Mg2+, Zn2+, Yb3+, Sc3+ et In3+ ; MII représente Nb5+ ; MI' est choisi dans le groupe constitué de Mg2+, Zn2+, Yb3+, Sc3+, In3+ et Zr4+ ; MII' représente Nb5+ ou Zr4+ ; 0 < x ≤ 0,05 ; 0,02 < y < 0,7 ; et 0 ≤ z ≤1, sous réserve que si MI' ou MII' représente Zr4+, alors MI' et MII' représentent tous deux Zr4+. L'invention concerne également un procédé pour la formation d'un cristal piézoélectrique à base d'un complexe relaxeur-PT, comprenant la pré-synthèse de matériaux précurseurs par calcination d'oxydes mixtes, le mélange des matériaux précurseurs avec des oxydes simples et une calcination pour former un matériau d'alimentation, puis la culture du cristal piézoélectrique à base du complexe relaxeur-PT de formule générale suivante : (Pb1-1,5xMx){[(MI,MII)1-z(MI',MII')z]1-yTiy}O3 à partir du matériau d'alimentation par un procédé Bridgman.
Also published as
JP2020512402
Latest bibliographic data on file with the International Bureau