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1. (WO2019046777) POLAR NANOREGIONS ENGINEERED RELAXOR-PbTiO3 FERROELECTRIC CRYSTALS
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Pub. No.: WO/2019/046777 International Application No.: PCT/US2018/049194
Publication Date: 07.03.2019 International Filing Date: 31.08.2018
IPC:
H01L 41/187 (2006.01) ,H01L 41/316 (2013.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
16
Selection of materials
18
for piezo-electric or electrostrictive elements
187
Ceramic compositions
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
22
Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
31
Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base
314
by depositing piezo-electric or electrostrictive layers, e.g. aerosol or screen printing
316
by vapour phase deposition
Applicants:
TRS TECHNOLOGIES, INC. [US/US]; 2820 East College Avenue State College, Pennsylvania 16801, US
Inventors:
LUO, Jun; US
HACKENBERGER, Wesley S.; US
LI, Fei; US
ZHANG, Shujun; US
SHROUT, Thomas R.; US
Agent:
MARCUS, David; US
CROUSE, Brett A.; US
DOBREA, Diane; US
HAVERSTICK, Kraig L.; US
LEPPO, Shawn K.; US
O'BRIAN, K. Scott; US
OLTMANS, Andrew L.; US
Priority Data:
62/553,51101.09.2017US
Title (EN) POLAR NANOREGIONS ENGINEERED RELAXOR-PbTiO3 FERROELECTRIC CRYSTALS
(FR) CRISTAUX FERROÉLECTRIQUES FORMÉS D'UN COMPLEXE RELAXEUR-PBTIO3 MODIFIÉS PAR DES NANORÉGIONS POLAIRES
Abstract:
(EN) A relaxor-PT based piezoelectric crystal is disclosed, comprising the general formula of (Pb1-1.5xMx){[(MI,MII)1-z(MI',MII')z]1-yTiy}O3, wherein: M is a rare earth cation; MI is selected from the group consisting of Mg2+, Zn2+, Yb3+, Sc3+, and In3+; MII is Nb5+; MI' is selected from the group consisting of Mg2+, Zn2+, Yb3+, Sc3+, In3+, and Zr4; MII' is Nb5+ or Zr4+; 0 < x ≤ 0.05; 0.02 < y < 0.7; and 0 ≤ z ≤ 1, provided that if either MI' or MII' is Zr4+, both MI' and MII' are Zr4+. A method for forming the relaxor-PT based piezoelectric crystal is disclosed, comprising pre-synthesizing precursor materials by calcining mixed oxides, mixing the precursor materials with single oxides and calcining to form a feeding material, and growing the relaxor-PT based piezoelectric crystal having the general formula of (Pb1-1.5xMx){[(MI,MII)1-z(MI',MII')z]1-yTiy}O3 from the feeding material by a Bridgman method.
(FR) L'invention concerne un cristal piézoélectrique à base d'un complexe relaxeur-PT, présentant la formule générale suivante : (Pb1-1,5xMx){[(MI,MII)1-z(MI',MII')z]1-yTiy}O3, dans laquelle : M représente un cation de terre rare ; MI est choisi dans le groupe constitué de Mg2+, Zn2+, Yb3+, Sc3+ et In3+ ; MII représente Nb5+ ; MI' est choisi dans le groupe constitué de Mg2+, Zn2+, Yb3+, Sc3+, In3+ et Zr4+ ; MII' représente Nb5+ ou Zr4+ ; 0 < x ≤ 0,05 ; 0,02 < y < 0,7 ; et 0 ≤ z ≤1, sous réserve que si MI' ou MII' représente Zr4+, alors MI' et MII' représentent tous deux Zr4+. L'invention concerne également un procédé pour la formation d'un cristal piézoélectrique à base d'un complexe relaxeur-PT, comprenant la pré-synthèse de matériaux précurseurs par calcination d'oxydes mixtes, le mélange des matériaux précurseurs avec des oxydes simples et une calcination pour former un matériau d'alimentation, puis la culture du cristal piézoélectrique à base du complexe relaxeur-PT de formule générale suivante : (Pb1-1,5xMx){[(MI,MII)1-z(MI',MII')z]1-yTiy}O3 à partir du matériau d'alimentation par un procédé Bridgman.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)