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1. (WO2019046548) FLASH MEMORY BLOCK RETIREMENT POLICY
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Pub. No.: WO/2019/046548 International Application No.: PCT/US2018/048788
Publication Date: 07.03.2019 International Filing Date: 30.08.2018
IPC:
G11C 16/34 (2006.01) ,G11C 16/26 (2006.01) ,G11C 29/42 (2006.01) ,G11C 29/52 (2006.01)
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
16
Erasable programmable read-only memories
02
electrically programmable
06
Auxiliary circuits, e.g. for writing into memory
34
Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
16
Erasable programmable read-only memories
02
electrically programmable
06
Auxiliary circuits, e.g. for writing into memory
26
Sensing or reading circuits; Data output circuits
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
29
Checking stores for correct operation; Testing stores during standby or offline operation
04
Detection or location of defective memory elements
08
Functional testing, e.g. testing during refresh, power-on self testing (POST) or distributed testing
12
Built-in arrangements for testing, e.g. built-in self testing (BIST)
38
Response verification devices
42
using error correcting codes (ECC) or parity check
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
29
Checking stores for correct operation; Testing stores during standby or offline operation
52
Protection of memory contents; Detection of errors in memory contents
Applicants:
SINGIDI, Harish Reddy [IN/US]; US
CARIELLO, Giuseppe [IT/US]; US
HE, Deping [CN/US]; US
STOLLER, Scott Anthony [US/US]; US
BATUTIS, Devin [US/US]; US
THOMSON, Preston [US/US]; US
HUANG, Jianmin [US/US]; US
TANPAIROJ, Kulachet [US/US]; US
ZHANG, John [CN/CN]; CN
LUO, Xiangang [CN/US]; US
LUO, Ting [CN/US]; US
Inventors:
SINGIDI, Harish Reddy; US
CARIELLO, Giuseppe; US
HE, Deping; US
STOLLER, Scott Anthony; US
BATUTIS, Devin; US
THOMSON, Preston; US
Agent:
PERDOK, Monique M.; US
ARORA, Suneel; US
BEEKMAN, Marvin L.; US
BLACK, David W.; US
SCHEER, Bradley W.; US
Priority Data:
15/690,90330.08.2017US
Title (EN) FLASH MEMORY BLOCK RETIREMENT POLICY
(FR) POLITIQUE DE RETRAIT DE BLOC DE MÉMOIRE FLASH
Abstract:
(EN) Devices and techniques for a flash memory block retirement policy are disclosed herein. In an example embodiment, a first memory block is removed from service in response to encountering a read error in the first memory block that exceeds a first error threshold. Recoverable data is copied from the first memory block to a second memory block. During each of multiple iterations, the first memory block is erased and programmed, and each page of the first memory block is read. In response to none of the pages exhibiting a read error that exceeds a second error threshold during the multiple iterations, the first memory block is returned to service.
(FR) L'invention concerne des dispositifs et des techniques pour une politique de retrait de bloc de mémoire flash. Dans un mode de réalisation donné à titre d'exemple, un premier bloc de mémoire est retiré du service en réponse à la rencontre d'une erreur de lecture dans le premier bloc de mémoire qui dépasse un premier seuil d'erreur. Des données récupérables sont copiées du premier bloc de mémoire à un second bloc de mémoire. Durant chacune d'itérations multiples, le premier bloc de mémoire est effacé et programmé, et chaque page du premier bloc de mémoire est lue. En réponse au fait qu'aucune des pages ne comporte d'erreur de lecture dépassant un second seuil d'erreur pendant les itérations multiples, le premier bloc de mémoire est remis en service.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)