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1. (WO2019046453) INTEGRATED EPITAXY SYSTEM HIGH TEMPERATURE CONTAMINANT REMOVAL
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Pub. No.: WO/2019/046453 International Application No.: PCT/US2018/048588
Publication Date: 07.03.2019 International Filing Date: 29.08.2018
IPC:
H01J 37/32 (2006.01) ,H01L 21/67 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
J
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37
Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32
Gas-filled discharge tubes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
Applicants:
APPLIED MATERIALS, INC. [US/US]; 3050 Bowers Avenue Santa Clara, California 95054, US
Inventors:
HAWRYLCHAK, Lara; US
LO, Kin Pong; US
SANCHEZ, Errol C.; US
Agent:
PATTERSON, B. Todd; US
DOUGHERTY, Chad M.; US
Priority Data:
62/552,11830.08.2017US
Title (EN) INTEGRATED EPITAXY SYSTEM HIGH TEMPERATURE CONTAMINANT REMOVAL
(FR) ÉLIMINATION DE CONTAMINANTS À HAUTE TEMPÉRATURE DE SYSTÈME D'ÉPITAXIE INTÉGRÉ
Abstract:
(EN) Implementations of the present disclosure generally relate to an improved vacuum processing system. In one implementation, the vacuum processing system includes a first transfer chamber coupling to at least one vapor phase epitaxy process chamber, a second transfer chamber, a transition station disposed between the first transfer chamber and the second transfer chamber, a plasma-cleaning chamber coupled to the first or second transfer chamber for removing contaminants from a surface of a substrate, and a load lock chamber coupled to the second transfer chamber.
(FR) Selon certains modes de réalisation, la présente invention concerne de manière générale un système de traitement sous vide amélioré. Selon un mode de réalisation, le système de traitement sous vide comporte une première chambre de transfert reliée à au moins une chambre de traitement d'épitaxie en phase vapeur, une seconde chambre de transfert, une station de transition disposée entre la première chambre de transfert et la seconde chambre de transfert, une première chambre de nettoyage au plasma reliée à la seconde chambre de transfert pour éliminer des oxydes à partir d'une surface d'un substrat, et une chambre à vanne reliée à la seconde chambre de transfert.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)