Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2019046106) DEVICES AND SYSTEMS WITH STRING DRIVERS INCLUDING HIGH BAND GAP MATERIAL AND METHODS OF FORMATION
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/046106 International Application No.: PCT/US2018/047809
Publication Date: 07.03.2019 International Filing Date: 23.08.2018
IPC:
H01L 27/115 (2006.01) ,H01L 29/66 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
10
including a plurality of individual components in a repetitive configuration
105
including field-effect components
112
Read-only memory structures
115
Electrically programmable read-only memories
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
Applicants:
MICRON TECHNOLOGY, INC. [US/US]; 8000 South Federal Way Mailstop 1-507 Boise, Idaho 83707, US
Inventors:
LIU, Haitao; US
HUANG, Guangyu; US
MOULI, Chandra, V.; US
GODA, Akira; US
PANDEY, Deepak, Chandra; US
KARDA, Kamal, M.; US
Agent:
SCHIERMAN, Elizabeth, Herbst; US
BACA, Andrew J.; US
ZIEGLER, Bailey M.; US
BEZDJIAN, Daniel J.; US
BAKER, Gregory C.; US
FLORES, Jesse M.; US
GUNN, J. Jeffrey; US
GUTKE, Steven W.; US
HAMER, Katherine A.; US
WALKOWSKI, Joseph A.; US
WATSON, James C.; US
WHITLOCK, Nathan E.; US
WOODHOUSE, Kyle M.; US
Priority Data:
16/110,21723.08.2018US
62/551,35329.08.2017US
Title (EN) DEVICES AND SYSTEMS WITH STRING DRIVERS INCLUDING HIGH BAND GAP MATERIAL AND METHODS OF FORMATION
(FR) DISPOSITIFS ET SYSTÈMES AVEC PILOTES DE CHAÎNE COMPRENANT UN MATÉRIAU À BANDE INTERDITE ÉLEVÉE ET PROCÉDÉS DE FORMATION
Abstract:
(EN) A device includes a string driver comprising a channel region between a drain region and a source region. At least one of the channel region, the drain region, and the source region comprises a high band gap material. A gate region is adjacent and spaced from the high band gap material. The string driver is configured for high-voltage operation in association with an array of charge storage devices (e.g., 2D NAND or 3D NAND). Additional devices and systems (e.g., non-volatile memory systems) including the string drivers are disclosed, as are methods of forming the string drivers.
(FR) La présente invention concerne un dispositif qui comprend un pilote de chaîne comprenant une région de canal entre une région de drain et une région de source. La région de canal et/ou la région de drain et/ou la région de source comprennent un matériau à bande interdite élevée. Une région de grille est adjacente et espacée du matériau à bande interdite élevée. Le pilote de chaîne est configuré pour un fonctionnement à haute tension en association avec un réseau de dispositifs de stockage de charge (par exemple, NAND 2D ou NAND 3D). L'invention concerne également des dispositifs et des systèmes supplémentaires (par exemple., des systèmes de mémoire non volatile) comprenant les pilotes de chaîne, ainsi que des procédés de formation des pilotes de chaîne.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)