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1. (WO2019046033) HIGH TEMPERATURE GATE DRIVER FOR SILICON CARBIDE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
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Pub. No.: WO/2019/046033 International Application No.: PCT/US2018/047178
Publication Date: 07.03.2019 International Filing Date: 21.08.2018
IPC:
H03K 17/082 (2006.01) ,H03K 17/14 (2006.01) ,H03K 17/687 (2006.01) ,H03K 17/691 (2006.01)
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
K
PULSE TECHNIQUE
17
Electronic switching or gating, i.e. not by contact-making and -breaking
08
Modifications for protecting switching circuit against overcurrent or overvoltage
082
by feedback from the output to the control circuit
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
K
PULSE TECHNIQUE
17
Electronic switching or gating, i.e. not by contact-making and -breaking
14
Modifications for compensating variations of physical values, e.g. of temperature
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
K
PULSE TECHNIQUE
17
Electronic switching or gating, i.e. not by contact-making and -breaking
51
characterised by the use of specified components
56
by the use, as active elements, of semiconductor devices
687
the devices being field-effect transistors
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
K
PULSE TECHNIQUE
17
Electronic switching or gating, i.e. not by contact-making and -breaking
51
characterised by the use of specified components
56
by the use, as active elements, of semiconductor devices
687
the devices being field-effect transistors
689
with galvanic isolation between the control circuit and the output circuit
691
using transformer coupling
Applicants:
UNIVERSITY OF HOUSTON SYSTEM [US/US]; 4800 Calhoun Road Houston, TX 77004, US
Inventors:
RAJASHEKARA, Kaushik; US
NAYAK, Parthasarathy; US
PRAMANICK, Sumit, Kumar; US
Agent:
BORRELLI, Sara, K.; US
DIETRICH, Blake, T.; US
ROURK, Christopher, J.; US
Priority Data:
62/551,98230.08.2017US
Title (EN) HIGH TEMPERATURE GATE DRIVER FOR SILICON CARBIDE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
(FR) CIRCUIT D'ATTAQUE DE GRILLE À HAUTE TEMPÉRATURE POUR TRANSISTOR À EFFET DE CHAMP MÉTAL-OXYDE-SEMI-CONDUCTEUR EN CARBURE DE SILICIUM
Abstract:
(EN) A high temperature (HT) gate driver for Silicon Carbide metal-oxide-semiconductor field-effect transistor (SiC MOSFET) uses commercial off-the-shelf COTS discrete components, and has an integrated short-circuit or overcurrent protection circuit and under voltage lock out (UVLO) protection circuit.
(FR) L’invention concerne un circuit d'attaque de grille à haute température (HT) pour transistor à effet de champ métal-oxyde-semi-conducteur en carbure de silicium (MOSFET SiC) qui utilise des composants distincts de type produits commerciaux (Commercial-off-the-shelf, « COTS »), et qui possède un circuit de protection contre les court-circuits ou les surintensités et un circuit de protection contre les verrouillages de sous-tensions (UVLO) intégrés.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)