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1. (WO2019046001) INTEGRATED EPITAXY AND PRECLEAN SYSTEM
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Pub. No.: WO/2019/046001 International Application No.: PCT/US2018/046501
Publication Date: 07.03.2019 International Filing Date: 13.08.2018
IPC:
H01L 21/67 (2006.01) ,H01L 21/677 (2006.01) ,H05H 1/46 (2006.01) ,H01L 21/683 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
677
for conveying, e.g. between different work stations
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
H
PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1
Generating plasma; Handling plasma
24
Generating plasma
46
using applied electromagnetic fields, e.g. high frequency or microwave energy
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683
for supporting or gripping
Applicants:
APPLIED MATERIALS, INC. [US/US]; 3050 Bowers Avenue Santa Clara, California 95054, US
Inventors:
HAWRYLCHAK, Lara; US
CHU, Schubert S.; US
MANDREKAR, Tushar; US
SANCHEZ, Errol C.; US
LO, Kin Pong; US
Agent:
PATTERSON, B. Todd; US
DOUGHERTY, Chad M.; US
Priority Data:
62/552,10730.08.2017US
Title (EN) INTEGRATED EPITAXY AND PRECLEAN SYSTEM
(FR) SYSTÈME INTÉGRÉ D'ÉPITAXIE ET DE PRÉNETTOYAGE
Abstract:
(EN) Implementations of the present disclosure generally relates to a transfer chamber coupled to at least one vapor phase epitaxy chamber a plasma oxide removal chamber coupled to the transfer chamber, the plasma oxide removal chamber comprising a lid assembly with a mixing chamber and a gas distributor; a first gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a second gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a third gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; and a substrate support with a substrate supporting surface; a lift member disposed in a recess of the substrate supporting surface and coupled through the substrate support to a lift actuator; and a load lock chamber coupled to the transfer chamber.
(FR) Des modes de réalisation de la présente invention concernent généralement une chambre de transfert couplée à au moins une chambre d'épitaxie en phase vapeur, une chambre d'élimination d'oxyde de plasma couplée à la chambre de transfert, la chambre d'élimination d'oxyde de plasma comprenant un ensemble couvercle avec une chambre de mélange et un distributeur de gaz ; une première entrée de gaz formée à travers une partie de l'ensemble couvercle et en communication fluidique avec la chambre de mélange ; une seconde entrée de gaz formée à travers une partie de l'ensemble couvercle et en communication fluidique avec la chambre de mélange ; une troisième entrée de gaz formée à travers une partie de l'ensemble couvercle et en communication fluidique avec la chambre de mélange ; et un support de substrat ayant une surface de support de substrat ; un élément de levage disposé dans un évidement de la surface de support de substrat et couplé à travers le support de substrat à un actionneur de levage ; et une chambre de verrouillage de charge couplée à la chambre de transfert.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)