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1. (WO2019046000) EPITAXY SYSTEM INTEGRATED WITH HIGH SELECTIVITY OXIDE REMOVAL AND HIGH TEMPERATURE CONTAMINANT REMOVAL
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Pub. No.: WO/2019/046000 International Application No.: PCT/US2018/046497
Publication Date: 07.03.2019 International Filing Date: 13.08.2018
IPC:
H01L 21/67 (2006.01) ,H05H 1/46 (2006.01) ,H01L 21/677 (2006.01) ,H01L 21/683 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
H
PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1
Generating plasma; Handling plasma
24
Generating plasma
46
using applied electromagnetic fields, e.g. high frequency or microwave energy
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
677
for conveying, e.g. between different work stations
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683
for supporting or gripping
Applicants:
APPLIED MATERIALS, INC. [US/US]; 3050 Bowers Avenue Santa Clara, California 95054, US
Inventors:
HAWRYLCHAK, Lara; US
LO, Kin Pong; US
SANCHEZ, Errol C.; US
CHU, Schubert S.; US
MANDREKAR, Tushar; US
Agent:
PATTERSON, B. Todd; US
DOUGHERTY, Chad M.; US
Priority Data:
16/057,21307.08.2018US
62/552,14530.08.2017US
Title (EN) EPITAXY SYSTEM INTEGRATED WITH HIGH SELECTIVITY OXIDE REMOVAL AND HIGH TEMPERATURE CONTAMINANT REMOVAL
(FR) SYSTÈME D'ÉPITAXIE INTÉGRÉ AVEC ÉLIMINATION D'OXYDE À HAUTE SÉLECTIVITÉ ET ÉLIMINATION DE CONTAMINANTS À HAUTE TEMPÉRATURE
Abstract:
(EN) In one implementation, a processing system includes a first transfer chamber coupling to at least one epitaxy process chamber, a second transfer chamber, a transition station disposed between the first transfer chamber and the second transfer chamber, a first plasma chamber coupled to the second transfer chamber for removing oxides from a surface of a substrate, and a load lock chamber coupled to the second transfer chamber. The transition station connects to the first transfer chamber and the second transfer chamber, and the transition station includes a second plasma chamber for removing contaminants from the surface of the substrate.
(FR) Selon l'invention, dans une mise en œuvre, un système de traitement comporte une première chambre de transfert couplée à au moins une chambre de traitement épitaxial, une seconde chambre de transfert, une station de transition disposée entre la première chambre de transfert et la seconde chambre de transfert, une première chambre plasma couplée à la seconde chambre de transfert pour éliminer des oxydes d'une surface d'un substrat, et une chambre de sas de chargement couplée à la seconde chambre de transfert. La station de transition est reliée à la première chambre de transfert et à la seconde chambre de transfert, et la station de transition comporte une seconde chambre plasma pour l'élimination des contaminants de la surface du substrat.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)