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1. (WO2019045937) INCREASED NAND PERFORMANCE UNDER HIGH THERMAL CONDITIONS
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Pub. No.: WO/2019/045937 International Application No.: PCT/US2018/044533
Publication Date: 07.03.2019 International Filing Date: 31.07.2018
IPC:
G11C 7/04 (2006.01) ,G11C 16/04 (2006.01) ,G11C 16/34 (2006.01)
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
7
Arrangements for writing information into, or reading information out from, a digital store
04
with means for avoiding disturbances due to temperature effects
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
16
Erasable programmable read-only memories
02
electrically programmable
04
using variable threshold transistors, e.g. FAMOS
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
16
Erasable programmable read-only memories
02
electrically programmable
06
Auxiliary circuits, e.g. for writing into memory
34
Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
Applicants:
MICRON TECHNOLOGY, INC. [US/US]; 8000 So. Federal Way Boise, Idaho 83716-9632, US
Inventors:
JEAN, Sebastien Andre; US
Agent:
PERDOK, Monique M.; US
ARORA, Suneel; US
BEEKMAN, Marvin L.; US
BLACK, David W.; US
SCHEER, Bradley W.; US
Priority Data:
15/690,70830.08.2017US
Title (EN) INCREASED NAND PERFORMANCE UNDER HIGH THERMAL CONDITIONS
(FR) PERFORMANCE NON-ET AUGMENTÉE DANS DES CONDITIONS THERMIQUES ÉLEVÉES
Abstract:
(EN) Devices and techniques for increased NAND performance under high thermal conditions are disclosed herein. An indicator of a high-temperature thermal condition for a NAND device may be obtained. A workload of the NAND device may be measured in response to the high-temperature thermal condition. Operation of the NAND device may then be modified based on the workload and the high-temperature thermal condition.
(FR) L'invention concerne des dispositifs et des techniques pour une performance NON-ET augmentée dans des conditions thermiques élevées. Un indicateur d'une condition thermique à température élevée pour un dispositif NON-ET peut être obtenu. Une charge de travail du dispositif NON-ET peut être mesurée en réponse à la condition thermique à température élevée. Le fonctionnement du dispositif NON-ET peut ensuite être modifié sur la base de la charge de travail et de la condition thermique à température élevée.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)